KRX102E [KEC]
EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); 外延平面NPN / PNP晶体管（开关，接口电路和驱动电路）
| 型号： | KRX102E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KRX102E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
B1
FEATURES
ᴌIncluding two devices in TESV.
(Thin Extreme Super mini type with 5 pin.)
ᴌWith Built-in bias resistors.
1
2
3
5
4
DIM MILLIMETERS
_
A
A1
B
1.6+0.05
_
1.0+0.05
_
1.6+0.05
ᴌSimplify circuit design.
_
+
B1
C
1.2 0.05
ᴌReduce a quantity of parts and manufacturing process.
0.50
_
D
H
J
0.2+0.05
_
+
0.5 0.05
_
+
0.12 0.05
P
P
EQUIVALENT CIRCUIT
P
5
Q
Q
2
1
OUT
OUT
Q
1
R1=47KΩ
R2=47KΩ
R1
R1
1. Q COMMON (EMITTER)
1
IN
IN
2. Q IN (BASE)
1
3. Q COMMON (EMITTER)
2
Q
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
1
R1=10KΩ
R2=47KΩ
R2
COMMON
R2
COMMON
Q
IN (BASE)
2
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
Type Name
4
5
4
5
Q1
Q2
BM
1
2
3
1
2
3
Q1 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
SYMBOL
RATING
50
UNIT
V
VO
VI
IO
Input Voltage
40, -10
100
V
Output Current
Ὠ
Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
SYMBOL
RATING
-50
UNIT
V
VO
VI
IO
Input Voltage
-30, 6
-100
V
Output Current
Ὠ
Q1, Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
PD *
RATING
200
UNIT
Ὥ
Power Dissipation
Tj
Junction Temperature
150
ᴱ
Tstg
Storage Temperature Range
* Total Raing.
-55ᴕ150
ᴱ
2002. 1. 24
Revision No : 1
1/3
KRX102E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Output Cut-off Current
SYMBOL
IO(OFF)
GI
TEST CONDITION
MIN.
TYP.
-
MAX.
500
-
UNIT.
VO=50V, VI=0
VO=5V, IO=10Ὠ
IO=10Ὠ, II=0.5Ὠ
VO=0.2V, IO=5Ὠ
VO=5V, IO=0.1Ὠ
VO=10V, IO=5Ὠ
VI=5V
-
80
-
ὦ
DC Current Gain
200
0.1
2.8
1.2
200
-
VO(ON)
VI(ON)
VI(OFF)
fT *
Output Voltage
0.3
5.0
-
V
V
Input Voltage (ON)
-
Input Voltage (OFF)
Transition Frequency
Input Current
1.0
-
V
-
ὲ
Ὠ
II
-
0.18
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Output Cut-off Current
SYMBOL
IO(OFF)
GI
TEST CONDITION
MIN.
TYP.
-
MAX.
-500
-
UNIT.
VO=-50V, VI=0
VO=-5V, IO=-10Ὠ
IO=-10Ὠ, II=-0.5Ὠ
VO=-0.2V, IO=-5Ὠ
VO=-5V, IO=-0.1Ὠ
VO=-10V, IO=-5Ὠ
VI=-5V
-
ὦ
DC Current Gain
Output Voltage
80
150
-0.1
-1.2
-0.75
200
-
VO(ON)
VI(ON)
VI(OFF)
fT *
-
-0.3
-1.8
-
V
V
Input Voltage (ON)
Input Voltage (OFF)
Transition Frequency
-
-0.5
-
V
-
ὲ
Ὠ
II
Input Current
-
-0.88
Note : * Characteristic of Transistor Only.
2002. 1. 24
Revision No : 1
2/3
KRX102E
IO - VI(ON)
IO - VI(ON)
Q
Q
2
1
100
-100
V
=0.2V
O
V
=-0.2V
O
-25
25
100
50
30
-50
-30
10
-10
C
5
3
-5
-3
Ta=25 C
Ta=-25 C
100
Ta=25 C
Ta=-25 C
Ta=
1
-1
0.5
0.3
-0.5
-0.3
0.1
0.3
1
3
10
30
100
-0.1
-0.3
-1
-3
-10
-30
(V)
-100
INPUT ON VOLTAGE V
(V)
INPUT ON VOLTAGE V
I(ON)
I(ON)
IO - VI(OFF)
IO - VI(OFF)
Q
Q
2
1
-3k
-1k
10k
V
O
=5V
V
=-5V
O
5k
3k
-500
-300
1k
500
300
-100
100
-50
-30
50
30
0.8
1.0
1.2
1.4
1.6
1.8
(V)
2.0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
INPUT OFF VOLTAGE V
INPUT OFF VOLTAGE V
(V)
I(OFF)
I(OFF)
GI - IO
GI - IO
Q
Q
2
1
1k
300
100
V
=-5V
O
Ta=100 C
500
300
Ta=25 C
Ta=-25 C
Ta=100 C
Ta=25 C
50
30
Ta=-25 C
100
50
10
5
V
=5V
O
20
0.5
1
3
10
30
100
-1
-3
-10
-30
-100
OUTPUT CURRENT I (mA)
O
OUTPUT CURRENT I (mA)
O
2002. 1. 24
Revision No : 1
3/3
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