KTA1073T [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER,CATHODE RAY TUBE BRIGHTNESS CONTROL); 外延平面PNP晶体管（高压控制，等离子显示器，数码管驱动器，阴极射线管亮度控制）
| 型号： | KTA1073T |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER,CATHODE RAY TUBE BRIGHTNESS CONTROL) |
| 文件： | 总3页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1073T
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
HIGH VOLTAGE CONTROL APPLICATIONS.
PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS.
CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
E
B
K
DIM MILLIMETERS
_
FEATURES
A
B
2.9+0.2
1.6+0.2/-0.1
High Voltage : VCBO=-300V, VCEO=-300V
Low Saturation Voltage : VCE(sat)=-0.5V(Max.)
Small Collector Output Capacitance : Cob=5.5pF(Typ.)
Complementary to KTC3207T.
_
0.70+0.05
C
D
2
1
3
_
0.4+0.1
E
F
2.8+0.2/-0.3
_
1.9+0.2
G
0.95
_
0.16+0.05
H
I
0.00-0.10
0.25+0.25/-0.15
0.60
J
K
L
0.55
I
H
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
)
J
J
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-300
-300
-5
UNIT
V
1. EMITTER
2. BASE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
3. COLLECTOR
V
V
-100
-20
mA
mA
W
TSM
IB
Base Current
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
0.9
150
Tstg
-55 150
* Package mounted on a ceramic board (600
0.8
)
Marking
h
Rank
FE
Lot No.
Type Name
S X
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
-0.1
-0.1
-
UNIT
VCB=-300V, IE=0
VEB=-5V, IC=0
-
-
-
-
A
A
V
V
IEBO
Emitter Cut-off Current
V(BR)CBO
V(BR)CEO
hFE(1)
IC=-0.1mA, IE=0
IC=-1mA, IB=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
-300
-300
30
50
-
-
-
-
VCE=-10V, IC=-1mA
-
-
DC Current Gain
hFE(2) (Note) VCE=-10V, IC=-20mA
-
200
-0.5
-1.2
-
VCE(sat)
VBE(sat)
fT
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-20mA
VCB=-20V, IE=0, f=1MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
-
V
V
-
-
50
-
55
5.5
MHz
pF
Cob
Collector Output Capacitance
6.0
Note : hFE(1) Classification
O:50 150, Y:100~200
2002. 11. 7
Revision No : 1
1/3
KTA1073T
IC - VCE (LOW VOLTAGE REGION)
IC - VCE (LOW CURRENT REGION)
-100
-80
-60
-40
-20
0
-10
-8
-6
-4
-2
0
-1mA
-0.8mA
-0.6mA
-0.4mA
-0.3mA
-0.2mA
-0.1mA
-10µA
I
=0µA
I
=0mA
B
B
0
-2
-4
-6
-8
-10
0
-40
-80
-120
-160
-200
(V)
COLLECTOR-EMITTER VOLTAGE V
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
CE
hFE - IC
hFE - IC
500
300
300
100
COMMON
EMITTER
V
=-10V
CE
V
=-10V
CE
Ta=100 C
Ta=25 C
-5V
50
30
100
-1V
50
30
Ta=-55 C
10
COMMON EMITTER
Ta=-25 C
5
3
10
-0.1
-0.3
-1
-3
-10
-30
-100
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
VBE(sat) - IC
VCE(sat) - I C
-5
-3
COMMON
EMITTER
COMMON EMITTER
-3
I
/I =10
B
I
/I =10
B
C
C
-1
-0.5
-0.3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.1
-0.1
-0.3
-1
-3
-10
-30
-100
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
(mA)
COLLECTOR CURRENT I (mA)
C
C
2002. 11. 7
Revision No : 1
2/3
KTA1073T
Pc - Ta
1.4
1.2
1.0
0.8
0.6
0.4
0.2
MOUNTED ON A
CERAMIC BOARD
(600mm2 `0.8mm)
0
140 160
0
20
40
60
80 100 120
AMBIENT TEMPERATURE Ta ( C)
2002. 11. 7
Revision No : 1
3/3
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