KTA1834 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
| 型号： | KTA1834 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 文件： | 总3页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1834D/L
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
FEATURES
Low Collector Saturation Voltage.
: VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A)
Large Collector Current
A
C
I
J
DIM MILLIMETERS
_
6.60+0.2
_
6.10+0.2
_
5.0+0.2
_
1.10+0.2
_
2.70+0.2
_
2.30+0.1
A
B
C
D
E
F
: IC=-10A(dc) IC=-15A(10ms, single pulse)
Complementary to KTC5001D/L.
H
I
1.00 MAX
_
2.30+0.2
_
0.5+0.1
_
2.00+0.20
_
0.50+0.10
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
J
H
K
L
M
O
P
P
F
L
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
1
2
3
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-30
UNIT
V
Q
0.95 MAX
1. BASE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
2. COLLECTOR
3. EMITTER
-20
V
-6
V
DPAK
-10
Collector Current
Base Current
A
A
ICP
-15
IB
-2
A
C
I
J
1.0
Ta=25
Tc=25
Collector Power
Dissipation
PC
W
10
DIM MILLIMETERS
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
Tj
Junction Temperature
150
_
+
5.0 0.2
_
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
Tstg
Storage Temperature Range
-55 150
P
H
G
_
+
_
+
_
+
G
H
I
1.0 MAX
_
2.30+0.2
_
0.5 0.1
+
_
2.0 0.2
+
J
F
F
L
K
L
P
_
+
0.50 0.1
_
+
0.1
1.0
0.90 MAX
1
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
IEBO
TEST CONDITION
MIN.
TYP.
MAX.
-10
UNIT
VCB=-20V
-
-
-
-
A
A
V
V
V
VEB=-5V
IC=-50 A
IC=-1mA
IE=-50 A
Emitter Cut-off Current
-10
BVCBO
BVCEO
BVEBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-30
-20
-6
180
82
-
hFE (1) (Note) VCE=-2V, IC=-0.5A
-
390
DC Current Gain
hFE (2)
VCE(sat)
VBE(sat)
fT
VCE=-2V, IC=-4.0A
-
-
-0.25
-1.2
-
IC=-4.0A, IB=-0.05A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
-0.16
-0.9
150
220
V
V
IC=-4A, IB=-0.05A
-
VCE=-5V, IE=1.5A, f=50MHz
VCB=-10V, IE=0, f=1MHz
-
MHz
pF
Cob
Collector Output Capacitance
-
-
Note : hFE(1) Classification GR:180~390.
2003. 3. 27
Revision No : 5
1/3
KTA1834D/L
I C - VBE
hFE - IC
-10
-1
1k
V
=-2V
CE
Ta=25 C
500
300
V
=-5V
CE
-0.1
V
=-2V
CE
V
=-1V
CE
100
-0.01
-0.001
50
30
-0.01
-0.1
-1
-10 -20
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
COLLECTOR CURRENT I (A)
C
COLLECTOR EMITTER VOLTAGE V
(V)
BE
VCE(sat) - I C
h FE - IC
2K
1K
-1K
Ta=25 C
V
=-2V
CE
-300
500
300
Ta=150 C
Ta=25 C
-100
-30
I
/I =80
B
C
Ta=-55 C
40
20
100
-10
-3
50
30
-0.01
-0.1
-1
-10 -20
-0.01 -0.03 -0.1
-0.3
-1
-3
-10 -20
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
C
VCE(sat) - IC
VBE(sat) - I C
-1K
-1K
I
/I =80
B
I
/I =80
B
C
C
-300
-100
-30
-300
Ta=-55 C
-100
-30
Ta=25 C
Ta=-55 C
Ta=150 C
Ta=25 C
Ta=150 C
-10
-3
-10
-3
-0.01
-0.1
-1
-10 -20
-0.01
-0.1
-1
-10 -20
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
C
2003. 3. 27
Revision No : 5
2/3
KTA1834D/L
f T - IE
Cob - VCE
1k
3K
1K
Ta=25
V
C
=-5V
Ta=25 C
f=1MHz
CE
f=50MHz
500
300
I
=0A
E
500
300
100
50
30
100
50
10
0.01 0.03
0.1
0.3
1
3
10
-0.1
-0.3
-1
-3
-10
-30 -100
(V)
EMITTER CURRENT I (A)
E
COLLECTOR-BASE VOLTAGE V
CE
Cib - VEB
SAFE OPERATING AREA
30
10K
I
MAX(PULSE)
C
*
Ta=25 C
f=1MHz
=0A
5K
3K
10
3
I
C
1K
1
0.3
500
300
0.1
SINGLE NONREPETITIVE
PULSE Tc=25 C
*
100
0.03
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
-0.05 -0.1
-0.3
-1
-3
-10
0.01
BASE-EMITTER VOLTAGE V
(V)
EB
0.01 0.03
0.1
0.3
1
3
10
30
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
Pc - Ta
12
10
8
1 Tc=25 C
2 Ta=25 C
1
6
4
2
2
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27
Revision No : 5
3/3
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