KTC3114 [KEC]

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING); 外延平面NPN晶体管(通用,切换)
KTC3114
型号: KTC3114
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
外延平面NPN晶体管(通用,切换)

晶体 晶体管 开关 局域网
文件: 总3页 (文件大小:397K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
KTC3114  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
A
B
SWITCHING APPLICATION.  
D
C
E
FEATURE  
F
High DC Current Gain : hFE=600 3600.  
G
H
DIM MILLIMETERS  
J
A
B
C
D
E
8.3 MAX  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
K
5.8  
L
0.7  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
_
+
Φ3.2 0.1  
3.5  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
50  
_
+
F
11.0 0.3  
G
H
J
2.9 MAX  
1.0 MAX  
1.9 MAX  
M
V
5
V
O
_
+
K
L
0.75 0.15  
N
P
_
+
15.50 0.5  
1
2
3
_
+
2.3 0.1  
M
N
O
P
150  
30  
mA  
mA  
W
_
+
0.65 0.15  
1.6  
IB  
1. EMITTER  
2. COLLECTOR  
3. BASE  
Base Current  
3.4 MAX  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
1.5  
Tj  
150  
-55 150  
TO-126  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
SYMBOL  
ICBO  
IEBO  
TEST CONDITION  
MIN.  
TYP.  
-
MAX.  
0.1  
0.1  
3600  
0.25  
-
UNIT  
VCB=50V, IE=0  
-
-
A
A
VEB=5V, IC=0  
-
hFE(Note)  
VCE(sat)  
fT  
VCE=6V, IC=2mA  
IC=100mA, IB=10mA  
VCE=10V, IC=10mA  
DC Current Gain  
600  
-
-
Collector- Emitter Saturation Voltage  
Transition Frequency  
0.1  
250  
3.5  
V
100  
-
MHz  
pF  
Cob  
VCB=10V, IE=0, f=1MHz  
VCE=6V, IC=0.1mA  
Collector Output Capacitance  
-
NF(1)  
NF(2)  
-
-
0.5  
0.3  
-
-
dB  
dB  
f=100Hz, Rg=10k  
VCE=6V, IC=0.1mA  
Noise Figure  
f=1kHz, Rg=10k  
Note: hFE Classification A:600 1800, B:1200 3600  
2003. 7. 24  
Revision No : 1  
1/3  
KTC3114  
I C - VCE  
hFE - I C  
160  
140  
120  
5k  
3k  
400  
200  
COMMON  
EMITTER  
Ta=25 C  
Ta=100  
C
Ta=25 C  
100  
80  
60  
1k  
Ta=-25 C  
100  
80  
500  
300  
50  
40  
30  
20  
60  
40  
20  
0
100  
COMMON EMITTER  
I
=10µA  
B
V
=6V  
50  
30  
CE  
0
0
1
2
3
4
5
6
0.1  
0.3  
1
3
10  
30  
100 200  
COLLECTOR-EMITTER VOLTAGE V  
(V)  
COLLECTOR CURRENT I (mA)  
C
CE  
IC - VBE  
VCE(sat) - IC  
1
160  
140  
120  
100  
80  
COMMON EMITTER  
/ I =10  
COMMON  
EMITTER  
I
B
0.5  
0.3  
C
V
CE  
=6V  
0.1  
60  
0.05  
0.03  
Ta=100 C  
40  
Ta=25 C  
Ta=-25 C  
20  
0
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.1  
0.3  
1
3
10  
30  
100 200  
BASE-EMITTER VOLTAGE V  
(V)  
COLLECTOR CURRENT I (mA)  
C
BE  
VBE(sat) - IC  
fT - IE  
2k  
1k  
10  
COMMON EMITTER  
/I =10  
COMMON EMITTER  
=10V  
I
C
B
V
5
3
CE  
Ta=25 C  
Ta=25 C  
500  
300  
1
100  
0.5  
0.3  
50  
30  
0.1  
0.1  
10  
-0.1  
0.3  
1
3
10  
30  
100 200  
-0.3  
-1  
-3  
-10  
-30  
-100  
COLLECTOR CURRENT I (mA)  
C
EMITTER CURRENT I (mA)  
E
2003. 7. 24  
Revision No : 1  
2/3  
KTC3114  
Cob - VCB  
100  
I
=0  
E
f=1MHz  
Ta=25 C  
50  
30  
10  
5
3
1
0.1  
0.3  
1
3
10  
30  
100  
COLLECTOR-BASE VOLTAGE V  
(V)  
CB  
2003. 7. 24  
Revision No : 1  
3/3  

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