KTC4077_08 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
| 型号： | KTC4077_08 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC4077
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
E
· High Voltage : VCEO=120V.
· Excellent hFE Linearity
M
B
M
DIM MILLIMETERS
_
A
+
2.00 0.20
D
2
1
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
· High hFE: hFE=200∼ 700.
· Low Noise : NF=1dB(Typ.), 10dB(Max.).
· Complementary to KTA2017.
_
+
B
C
D
E
1.25 0.15
_
0.90+0.10
3
0.3+0.10/-0.05
_
+
2.10 0.20
G
H
0.65
0.15+0.1/-0.06
J
1.30
K
L
0.00-0.10
0.70
_
H
+
0.42 0.10
M
N
0.10 MIN
N
N
K
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
RATING
120
UNIT
V
1. EMITTER
2. BASE
VCBO
VCEO
VEBO
IC
3. COLLECTOR
120
V
5
V
100
mA
mA
mW
℃
USM
IB
Base Current
20
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
100
Tj
150
Tstg
-55∼ 150
℃
Marking
Lot No.
h
Rank
FE
Type Name
D
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
μA
VCB=120V, IE=0
-
-
-
0.1
0.1
700
0.3
-
IEBO
VEB=5V, IC=0
Emitter Cut-off Current
DC Current Gain
-
μA
hFE (Note)
VCE(sat)
fT
VCE=6V, IC=2mA
IC=10mA, IB=1mA
VCE=6V, IC=1mA
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA
f=1kHz, Rg=10kΩ
200
-
Collector-Emitter Saturation Voltage
Transition Frequency
-
-
-
-
V
MHz
pF
100
4.0
Cob
Collector Output Capacitance
-
Noise Figure
NF
-
1.0
10
dB
Note : hFE Classification GR(6):200∼ 400 BL(8):350∼ 700
2008. 8. 29
Revision No : 3
1/2
KTC4077
hFE - I C
h PARAMETER - VCE
1k
500
300
h
fe
Ta=100 C
500
300
Ta=25 C
Ta=-25 C
100
30
COMMON EMITTER
I
=-1mA
E
100
f=270Hz
Ta=25
C
50
30
10
3
(xkΩ)
(x10 -5
h
COMMON EMITTER
ie
V
=6V
CE
h
h
)
re
10
Ω
0.3
1
3
10
30
100
400
(xµ
)
oe
COLLECTOR CURRENT I
(mA)
C
1
1
3
10
30
100
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
Cob - VCB
NF - Rg , IC
50
30
100k
12
10
f=1MHz
=0
8
6
COMMON EMITTER
=6V
I
E
4
3
V
CE
f=1kHz
10k
1k
Ta=25 C
2
10
5
3
2
3
4
100
10
6
8
1
10
12
0
10
20
30
40
50
60
CB
70
(V)
80
COLLECTOR-BASE VOLTAGE V
10
100
1k
10k
COLLECTOR CURRENT I
(µA)
C
2008. 8. 29
Revision No : 3
2/2
相关型号：
KTC4080
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)
KEC
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