KTC4793 [KEC]

TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER); 三重扩散型NPN晶体管(功率放大器驱动级放大器)
KTC4793
型号: KTC4793
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
三重扩散型NPN晶体管(功率放大器驱动级放大器)

晶体 放大器 晶体管 功率放大器 驱动
文件: 总2页 (文件大小:395K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
KTC4793  
TRIPLE DIFFUSED NPN TRANSISTOR  
TECHNICAL DATA  
POWER AMPLIFIER APPLICATIONS.  
DRIVER STAGE AMPLIFIER APPLICATINS.  
A
C
DIM MILLIMETERS  
U
A
10.30 MAX  
15.30 MAX  
2.70Ź0.30  
0.85 MAX  
Ѹ3.20Ź0.20  
3.00Ź0.30  
12.30 MAX  
0.75 MAX  
13.60Ź0.50  
3.90 MAX  
1.20  
FEATURES  
B
C
E
High Transition Frequency : fT=100MHz(Typ.)  
Complementary Pair with KTA1837.  
S
D
E
F
G
H
R
T
L
L
J
K
L
M
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
)
1.30  
M
N
O
P
V
2.54  
D
D
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
4.50Ź0.20  
6.80  
230  
230  
5
2.60Ź0.20  
10Ɓ  
Q
R
N
N
H
V
S
T
25Ş  
T
T
5Ş  
V
U
V
0.5  
2.60Ź0.15  
3
2
1
1
A
1. BASE  
2. COLLECTOR  
3. EMITTER  
IB  
Base Current  
0.1  
A
2.0  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
PC  
W
20  
TO-220IS  
Tj  
Junction Temperature  
150  
-55 150  
Tstg  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=230V, IE=0  
MIN.  
TYP.  
MAX.  
1.0  
1.0  
-
UNIT  
-
-
A
A
IEBO  
V(BR)CEO  
hFE  
VEB=5V, IC=0  
Emitter Cut-off Current  
-
-
-
IC=10mA, IB=0  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
230  
V
VCE=5V, IC=100mA  
IC=500mA, IB=50mA  
VCE=5V, IC=500mA  
VCE=10V, IC=100mA  
VCB=10V, IE=0, f=1MHz  
100  
-
320  
1.5  
1.0  
-
VCE(sat)  
VBE  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
-
-
-
-
-
V
V
-
fT  
Transition Frequency  
100  
20  
MHz  
pF  
Cob  
Collector Output Capacitance  
-
2003. 2. 17  
Revision No : 1  
1/2  
KTC4793  
I C - VCE  
I C - VBE  
1.0  
0.8  
1.0  
0.8  
0.6  
0.4  
20  
COMMON EMITTER  
=5V  
10  
8
V
CE  
6
0.6  
0.4  
0.2  
25  
-25  
Tc=100 C  
4
I
=2mA  
B
0.2  
0
COMMON EMITTER  
Tc=25 C  
0
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
COLLECTOR-EMITTER VOLTAGE V  
(V)  
BASE-EMITTER VOLTAGE V  
(V)  
CE  
BE  
VCE(sat) - IC  
hFE - IC  
1
500  
300  
COMMON EMITTER  
COMMON EMITTER  
=5V  
I
/I =10  
B
0.5  
0.3  
C
V
CE  
Tc=100 C  
Tc=100 C  
Tc=25 C  
100  
25  
-25  
0.1  
Tc=-25 C  
50  
30  
0.05  
0.03  
0.01  
10  
0.003  
0.01  
0.03  
0.1  
0.3  
1
3
0.003  
0.01  
0.03  
0.1  
0.3  
1
COLLECTOR CURRENT I (A)  
C
COLLECTOR CURRENT I (A)  
C
SAFE OPERATING AREA  
f T - IC  
3
I
MAX(PULSED)  
C
300  
I
MAX  
1ms  
C
(CONTINOUS)  
10ms  
1
100ms  
D
0.5  
0.3  
C OPERATION  
100  
50  
30  
0.1  
COMMON EMITTER  
0.05  
0.03  
SINGLE NONREPETITIVE  
PULSE Tc=25 C  
V
=10V  
CE  
Tc=25 C  
CURVES MUST BE DERATED  
LINEARLY WITH INCREASE  
IN TEMPERATURE  
0
5
10  
30  
100  
300  
1k  
0.01  
COLLECTOR CURRENT I (mA)  
C
1
3
5
10  
30 50 100  
300 500  
(V)  
COLLECTOR-EMITTER VOLTAGE V  
CE  
2003. 2. 17  
Revision No : 1  
2/2  

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