KTJ6131E [KEC]
P CHANNEL MOS FIELD EFFECT TRANSISTOR; P沟道MOS场效应晶体管
| 型号： | KTJ6131E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | P CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTJ6131E
SEMICONDUCTOR
P CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
B
FEATURES
2.5 Gate Drive.
DIM MILLIMETERS
_
1.60+0.10
A
B
C
D
Low Threshold Voltage : Vth=-0.5 -1.5V.
High Speed.
_
+
0.85 0.10
2
1
_
0.70+0.10
3
D
E
G
H
J
0.27+0.10/-0.05
_
1.60+0.10
Small Package.
_
+
1.00 0.10
Enhancement-Mode.
0.50
_
0.13+0.05
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
VDS
VGSS
ID
RATING
-30
UNIT
V
1. SOURCE
2. GATE
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
3. DRAIN
V
20
-50
mA
mW
PD
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
100
ESM
Tch
150
Tstg
-55 150
EQUIVALENT CIRCUIT
D
Marking
Type Name
E B
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
16V, VDS=0V
MIN.
TYP. MAX. UNIT
VGS
=
-
-
-
1
A
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
ID=-100 A, VGS=0V
-30
-
V
VDS=-30V, VGS=0V
-
-
-1
A
Vth
VDS=-3V, ID=-0.1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
-0.5
-
-1.5
V
|Yfs|
VDS=-3V, ID=-10mA
15
-
-
-
40
-
mS
RDS(ON)
Ciss
ID=-10mA, VGS=-2.5V
VDS=-3V, VGS=0V, f=1MHz
VDS=-3V, VGS=0V, f=1MHz
VDS=-3V, VGS=0V, f=1MHz
20
10.4
2.8
8.4
0.15
0.13
-
pF
pF
pF
S
Crss
Reverse Transfer Capacitance
Output Capacitance
-
-
Coss
-
-
ton
Turn-on Time
Turn-off Time
-
-
Switching Time
VDD=-3V, ID=-10mA, VGS=0 -2.5V
toff
-
-
S
2003. 6. 23
Revision No : 0
1/3
KTJ6131E
ID - VDS
ID - VDS
(LOW VOLTAGE REGION)
-50
-40
-30
-20
-10
0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2.4V
-2.5V
-1.3V
COMMON SOURCE
Ta=25 C
-2.5V
COMMON SOURCE
Ta=25 C
-2.2V
-2.0V
-1.15V
-1.1V
-1.8V
-1.05V
-1.0V
-1.6V
-1.4V
V
GS
=-0.9V
V
GS
=-1.2V
0
-2
-4
-6
-8
(V)
-10
0
-0.1
-0.2
-0.3
-0.4
(V)
-0.5
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
DS
DS
IDR - VDS
ID - VGS
-50
-30
-50
-30
COMMON SOURCE
=-3V
COMMON SOURCE
=0
V
DS
-10
-3
-10
-3
V
GS
Ta=100 C
D
S
-1
-0.3
-1
-0.3
Ta=25 C
Ta=-25 C
I
G
DR
-0.1
-0.1
-0.03
-0.01
-0.03
-0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
-1
-2
-3
-4
-5
DRAIN-SOURCE VOTAGE V
(V)
GATE-SOURCE VOTAGE V
(V)
DS
GS
C - VDS
Yfs - ID
100
50
30
COMMON SOURCE
=-3V
V
DS
50
30
Ta=25 C
C
iss
10
C
oss
5
3
C
rss
COMMON SOURCE
=0
10
5
V
GS
f=1MHz
Ta=25 C
1
0.5
-1
-3 -5
-10
-30 -50 -100
-0.1
-0.3 -0.5 -1
-3 -5
-10
(V)
-20
DRAIN-SOURCE VOLTAGE V
DRAIN CURRENT I (mA)
D
DS
2003. 6. 23
Revision No : 0
2/3
KTJ6131E
VDS(ON) - ID
t - ID
-3K
-1K
1K
COMMON SOURCE
=-2.5V
V
GS
500
300
Ta=25 C
t
off
-500
-300
t
f
t
on
100
t
r
-100
50
30
V
DD
=-3V
V
OUT
-50
-30
<
=
D.U. 1%
0
V
IN
V
:t , t < 5ns
r
f
IN
(Z
-2.5V
=50Ω)
OUT
10µs
COMMON SOURCE
Ta=25 C
V
DD
-10
10
-1
-3 -5
-10
-30 -50 -100
-0.3
-1
-3
-10
-30 -50
DRAIN CURRENT I (mA)
D
DRAIN CURRENT I (mA)
D
PD - Ta
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
V
OUT
0
V
=-3V
DD
10%
V
IN
0
<
D.U. 1%
=
V
IN
90%
-2.5V
(ON)
-2.5V
V
:t , t < 5ns
r
IN
f
V
DS
10µs
(Z
=50Ω)
90%
10%
OUT
V
V
IN
OUT
COMMON SOURCE
Ta=25 C
V
DD
t
V
t
r
f
DD
t
t
on
off
2003. 6. 23
Revision No : 0
3/3
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