KTK596

更新时间:2024-09-18 02:09:02
品牌:KEC
描述:N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)

KTK596 概述

N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE) N沟道结FIFLD EFFFCT晶体管(电容麦克风) 小信号场效应晶体管

KTK596 规格参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
FET 技术:JUNCTION极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.1 W子类别:Other Transistors
表面贴装:NO

KTK596 数据手册

通过下载KTK596数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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KTK596  
SEMICONDUCTOR  
N CHANNEL JUNCTION FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
CONDENSER MICROPHONE APPLICATION.  
FEATURES  
B
Expecially Suited for Use in Audio, Telephone.  
Capacitor Microphones.  
Excellent Voltage Characteristics.  
Excellent Transient Characteristics.  
DIM  
A
B
MILLIMETERS  
3.20 MAX  
O
H
M
4.30 MAX  
C
0.55 MAX  
_
2.40+0.15  
D
E
1.27  
F
2.30  
_
C
+
G
H
J
14.00 0.50  
0.60 MAX  
1.05  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
E
E
K
L
1.45  
SYMBOL  
RATING  
-20  
UNIT  
V
25  
M
N
O
0.80  
VGDO  
IG  
Gate-Drain Voltage  
Gate Current  
0.55 MAX  
0.75  
3
1
2
N
10  
mA  
mA  
mW  
L
1. SOURCE  
2. GATE  
ID  
Drain Current  
1
PD  
Drain Power Dissipation  
Junction Temperature  
Storage Temperature Range  
400  
3. DRAIN  
Tj  
150  
Tstg  
-55 150  
TO-92M  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Gate-Drain Breakdown Voltage  
Gate-Source Cut-off Voltage  
Drain Current  
SYMBOL  
V(BR)GDO  
VGS(OFF)  
IDSS (Note)  
| yfs |  
TEST CONDITION  
MIN.  
-20  
-
TYP.  
MAX.  
UNIT  
V
IG=-100 A  
-
-
-1.5  
480  
-
VDS=5V, ID=1 A  
-0.6  
-
V
VDS=5V, VGS=0  
100  
0.4  
-
A
VDS=5V, VGS=0, f=1kHz  
VDS=5V, VGS=0, f=1MHz  
VDS=5V, VGS=0, f=1MHz  
Foward Transfer Admittance  
Input Capacitance  
1.2  
3.5  
0.65  
mS  
pF  
pF  
Ciss  
-
Crss  
Reverse Transfer Capacitance  
-
-
Note : IDSS Classification A:100 170, B:150 240, C:210 350, C1:210~310, C2:290~350, D:320 480  
2002. 8. 7  
Revision No : 3  
1/3  
KTK596  
ELECTRICAL CHARACTERISTICS  
(Ta=25 , VCC=4.5V, RL=1k , Cin=15pF, See Specified Test Circuit.)  
CHARACTERISTIC  
Voltage Gain  
SYMBOL  
GV  
TEST CONDITION  
Vin=10mV, f=1kHz  
MIN.  
TYP.  
MAX.  
-
UNIT  
dB  
-
-
-3.0  
Reduced Voltage Characteristic  
Frequency Characteristic  
Input Resistance  
GVV  
GVF  
Vin=10mV, f=1kHz VCC=4.5V 1.5V  
f=1kHz 110Hz  
f=1kHz  
-1.2  
-4.0  
-1.0  
-
dB  
-
-
-
dB  
Zin  
25  
-
M
ZO  
Output Resistance  
f=1kHz  
-
700  
Vin=30mV, f=1kHz  
Vin=0, A curve  
Total Harmonic Distortion  
Output Noise Voltage  
THD  
VNO  
-
1.0  
-
%
-
-110  
dB  
SPECIFIED TEST CIRCUIT  
Voltage gain.  
Frequency Characteristic.  
Distortion.  
Reduced Voltage Characteristic.  
1k  
V
CC  
=4.5V  
V
CC  
=1.5V  
33uF  
15pF  
A
B
V
THD  
VTVM  
1kΩ  
OSC  
For Output  
Impedance  
2002. 8. 7  
Revision No : 3  
2/3  
KTK596  
VNO - IDSS  
THD - VIN  
30  
10  
-110  
-112  
-114  
-116  
-118  
-120  
V
V
R
:V =4.5V  
NO CC  
THD : V =4.5V  
CC  
=0,A CURVE  
f=1kHz  
: V =5.0V  
DS  
i
I
DSS  
=1.0k  
L
I
:V =5.0V  
DSS DS  
5
3
1
0.7  
0.5  
50  
50  
50  
70 100  
300  
500  
1k  
1k  
1k  
0
40  
80  
120  
160  
(mV)  
200  
240  
DRAIN CURRENT I  
(µA)  
INPUT VOLTAGE V  
DSS  
IN  
G vV - IDSS  
THD - IDSS  
50  
30  
2
0
-2  
-4  
-6  
10  
7
G V :V =4.5V  
v
CC  
1.5V  
THD : V  
V
=4.5V  
CC  
=30mV  
V
=10mV  
in  
in  
f=1kHz  
:V =5.0V  
5
3
f=1kHz  
: V =5.0V  
DS  
I
DSS DS  
I
DSS  
70 100  
300  
500  
50  
70 100  
DRAIN C  
300  
DSS  
500  
(µA)  
1k  
DRAIN CURRENT I  
(µA)  
URRENT I  
DSS  
Z i - I DSS  
Z o - IDSS  
36  
34  
32  
30  
28  
26  
700  
600  
500  
400  
300  
200  
Z
:V =4.5V  
CC  
Z
:V =4.5V  
CC  
i
o
V
=10mV  
V
=10mV  
in  
in  
f=1kHz  
:V  
f=1kHz  
I :V =5.0V  
DSS  
I
=5.0V  
DS  
DS  
DSS  
70 100  
300  
DSS  
500  
( A)  
50  
70 100  
DRAIN CURRENT I  
300  
DSS  
500  
(µA)  
1k  
DRAIN CURRENT I  
2002. 8. 7  
Revision No : 3  
3/3  

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