KTN2369_02 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
| 型号： | KTN2369_02 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTN2369/A
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH SPEED SWITCHING APPLICATION.
B
C
FEATURES
·High Frequency Characteristics
: fT=500MHz (Min.) (VCE=10V, f=100MHz, IC=10mA).
·Excellent Switching Characteristics.
DIM MILLIMETERS
N
·KTN2369/2369A Electrically Similar to 2N2369/2369A.
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
1.00
MAXIMUM RATING (Ta=25℃)
F
1.27
G
H
J
0.85
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
40
UNIT
V
0.45
_
H
14.00 +0.50
K
L
0.55 MAX
2.30
F
F
15
V
M
0.45 MAX
1.00
N
4.5
V
3
1
2
Collector Current
500
mA
1. EMITTER
2. BASE
Collector Power Dissipation
(Ta=25℃)
3. COLLECTOR
PC
625
mW
Tj
Junction Temperature
150
℃
℃
TO-92
Tstg
Storage Temperature Range
-55∼150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
-
TYP.
MAX.
UNIT
VCB=20V, IE=0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
ICBO
Collector Cut-off Current
μA
VCB=20V, IE=0, Ta=125℃
IC=10μA, IE=0
-
30
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
KTN2369/A
40
15
4.5
40
20
20
20
20
-
-
IE=10mA, IB=0
-
V
IE=10μA, IC=0
-
120
-
IC=10mA, VCE=1.0V
IC=10mA, VCE=1.0V, Ta=-55℃
KTN2369
hFE
DC Current Gain
KTN2369A
KTN2369
IC=10mA, VCE=0.35V, Ta=-55℃
IC=100mA, VCE=2.0V
-
-
IC=100mA, VCE=1.0V
KTN2369A
-
VCE(sat)
VBE(sat)
fT
IC=10mA, IB=1.0mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
*
*
0.25
0.85
-
V
V
IC=10mA, IB=1.0mA
0.70
500
-
IC=10mA, VCE=10V, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
MHz
pF
Cob
Collector Output Capacitance
Storage Time
4.0
13
tstg
IC=100mA, IB1=-IB2=10mA, VCC=10V
VCC=3.0V, IC=10mA,
-
ton
Turn-on Time
Turn-off Time
-
-
-
-
12
15
nS
IB1=3.0mA, IB2=-1.5mA
IC=10mA, IB1=3.0mA
toff
IB2=-1.5mA, VCC=3.0V
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
2002. 6. 17
Revision No : 3
1/2
KTN2369/A
h FE - IC
VCE(sat) - IC
200
150
100
0.5
0.4
0.3
0.2
0.1
0
V
CE
=1V
COMMON EMITTER
I
/I =10
B
C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=125 C
50
0
Ta=25 C
Ta=-40 C
0.01
0.1
1
10
100
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
Cob - VCB , C ib - VEB
VBE(sat) - IC
1.5
1.3
1.1
0.9
0.7
0.5
0.3
5.0
4.0
3.0
2.0
1.0
0
COMMON
EMITTER
f=1MHz
COMMON EMITTER
I
/I =10
B
C
C
Ta=25 C
ibo
C
obo
0.1
0.3
1
3
10
30
100
300
0.1
0.3
1.0
3.0
3 10
0 50
COLLECTOR-BASE VOLTAGE V
EMITTER-BASE VOLTAGE V
(V)
COLLECTOR CURRENT I (mA)
C
CB
(V)
EB
I C - VBE
PC - Ta
700
600
500
400
300
200
100
0
30
10
COMMON EMITTER
=1V
V
CE
5
3
C
5
1
2
=
a
T
0.5
0.3
0.1
0
0.2
0.4
0.6
0.8
(V)
1.0
0
25
50
75
100
125
150
175
BASE-EMITTER VOLTAGE V
BE
AMBIENT TEMPERATURE Ta ( C)
2002. 6. 17
Revision No : 3
2/2
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