MJD117 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.); 外延平面PNP晶体管（单片式结构，在基极 - 发射极分流电阻工业用途。 ）
| 型号： | MJD117 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| 文件： | 总2页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
MJD117/L
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A
C
I
J
FEATURES
DIM MILLIMETERS
High DC Current Gain.
_
6.60+0.2
_
6.10+0.2
_
5.0+0.2
_
1.10+0.2
A
B
C
D
E
F
: hFE=1000(Min.), VCE=-4V, IC=-1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix)
Complementary to MJD112/L.
_
2.70+0.2
_
2.30+0.1
H
I
1.00 MAX
_
2.30+0.2
_
0.5+0.1
J
_
2.00+0.20
H
K
L
M
O
P
P
_
0.50+0.10
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
F
L
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
1
2
3
Q
0.95 MAX
SYMBOL
VCBO
RATING
-100
-100
-5
UNIT
V
1. BASE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
2. COLLECTOR
3. EMITTER
VCEO
V
VEBO
V
DPAK
DC
Collector Current
Pulse
-2
IC
IB
A
mA
W
-4
Base Current
DC
-50
A
C
I
J
1.0
Ta=25
Tc=25
Collector Power
Dissipation
PC
20
DIM MILLIMETERS
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
Tj
Junction Temperature
150
_
+
5.0 0.2
Tstg
_
Storage Temperature Range
-55 150
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
P
H
G
_
+
_
+
_
+
G
H
I
1.0 MAX
_
2.30+0.2
_
0.5 0.1
+
J
C
F
F
L
_
+
K
L
P
2.0 0.2
_
+
0.50 0.1
_
+
0.1
1.0
0.90 MAX
B
1
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
R
R
2
1
= 10kΩ
= 0.6kΩ
E
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
VCEO(SUS)
ICEO
TEST CONDITION
IC=-30mA, IB=0
MIN.
TYP.
MAX. UNIT
Collector-Emitter Sustaining Voltage
-100
-
-
-
-
-
-
-20
-20
-2
V
VCE=-50V, IB=0
VCB=-100V, IE=0
VEB=-5V, IC=0
-
-
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
A
ICBO
IEBO
-
mA
VCE=-3V, IC=-0.5A
VCE=-3V, IC=-2A
IC=-2A, IB=-8mA
VCE=-3V, IC=-2A
500
-
hFE
1,000 12,000
-
VCE(sat)
VBE(ON)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
-
-
-
-
-
-
-2.0
-2.8
-
V
V
VCE=-10V, IC=0.75A, f=1MHz
VCB=-10V, IE=0, f=0.1MHz
Current Gain Bandwidth Product
Collector Output Capacitance
25
-
MHz
pF
Cob
200
2003. 3. 27
Revision No : 4
1/2
MJD117/L
VCE(sat) , VBE(sat) - IC
hFE - IC
-10
5k
3k
I
/I =250
B
V
CE
=-3V
C
-5
-3
1k
V
BE(sat)
-1
500
300
V
CE(sat)
-0.5
-0.3
100
50
-0.1
-0.01
-0.03
-0.1
-0.3
-1
-3 -5
-0.01
-0.03
-0.1
-0.3
-1
-3 -5
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I
(mA)
C
Cob - VCB
PC - Ta
500
300
25
20
15
10
5
1 Tc=25 C
2 Ta=25 C
1
100
50
30
2
10
0
-0.1
-0.3
-1
-3
-10
-30 -50
(V)
0
50
100
150
200
COLLECTOR-BASE VOLTAGE V
CASE TEMPERATURE Ta ( C)
CB
SAFE OPERATING AREA
-10
I
I
MAX.(PULSED) *
MAX.
C
C
-5
-3
100
µ
S*
(CONTINUOUS)
DC OPERATION
Tc=25 C
5mS*
-1
-0.5
-0.3
-0.1
SINGLE NONREPETIVE
*
PULSE Tc=25 C
-0.05
-0.03
CURVES MUST BE DREATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.01
-1
-3
-10
-30
-100 -200
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
2003. 3. 27
Revision No : 4
2/2
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