MPS651 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE); 外延平面NPN晶体管（电压稳压器传递斜坡驱动器，工业用）
| 型号： | MPS651 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
MPS651
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
B
C
FEATURES
ᴌHigh Voltage : VCEO=60V(Min.).
ᴌHigh Current : IC(Max.)=1A.
ᴌHigh Transition Frequency : fT=150MHz(Typ.).
ᴌWide Area of Safe Operation.
ᴌComplementary to MPS751.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
1.00
F
1.27
G
H
J
0.85
0.45
_
H
14.00 +0.50
K
L
M
0.55 MAX
2.30
0.45 MAX
1.00
F
F
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
N
3
1
2
80
1. EMITTER
2. BASE
3. COLLECTOR
60
V
5
V
DC
Pulse
1
2
Collector Current
A
TO-92
ICP
PC
Collector Power Dissipation
Junction Temperature
625
mW
ᴱ
Tj
150
Tstg
Storage Temperature Range
-55ᴕ150
ᴱ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX. UNIT
VCB=50V, IE=0
Collector Cut-off Current
IEBO
-
-
-
-
100
100
320
-
nA
nA
VEB=4V, IC=0
Emitter Cut-off Current
DC Current Gain
hFE(1)
hFE(2)
V(BR)CEO
VCE(sat)
VBE(sat)
fT
VCE=2V, IC=50mA
VCE=2V, IC=1A
100
30
60
-
-
-
IC=1mA, IB=0
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
-
-
V
V
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
0.15
0.85
150
12
0.5
1.2
-
-
V
-
MHz
pF
Cob
Collector Output Capacitanc
-
-
Note : hFE(1) Classification
Y:100ᴕ200 , GR:160ᴕ320
1999. 11. 30
Revision No : 2
1/3
MPS651
I C - V CE
IC - VCE
1k
800
600
400
200
0
1k
800
600
400
200
0
20mA
10mA
4mA
3mA
2mA
6mA
4mA
2mA
1mA
I
=0mA
I =0mA
B
B
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR-EMITTER VOLTAGE V (V)
CE
hFE - I C
Cob - VCB
100
1k
COMMON EMITTER
Ta=25 C
COMMON EMITTER
f=1MHz
Ta=25 C
500
300
50
30
V
CE
=2V
100
50
30
10
5
3
10
1
3
10
30
100
300
1k
3k
1
3
5
10
30 50
100
COLLECTOR CURRENT I (mA)
C
COLLECTOR-BASE VOLTAGE V
(V)
CB
f T - I C
VCE(sat) - I C
300
100
5
3
COMMON EMITTER
Ta=25 C
COMMON EMITTER
Ta=25 C
1
V
=10V
CE
0.5
0.3
50
30
0.1
0.05
0.03
0.01
10
1
3
10
30
100
300
5
10
30
100
300
1k
3k
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
1999. 11. 30
Revision No : 2
2/3
MPS651
SAFE OPERATING AREA
Pc - Ta
5
3
1.2k
1k
1PULSE
I
I
CP
C
MAX.
1
0.5
0.3
800
600
400
0.1
0.05
0.03
200
0
0.01
0.005
0.5
1
3
5
10
30 50
100
0
20
40
60
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE V (V)
CE
AMBIENT TEMPERATURE Ta ( C)
1999. 11. 30
Revision No : 2
3/3
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