TIP33C [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER); 外延平面NPN晶体管(高功率放大器)型号: | TIP33C |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER) |
文件: | 总2页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
TIP33C
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
A
Q
B
K
FEATURES
ᴌComplementary to TIP34C.
ᴌRecommended for 45Wᴕ50W Audio Frequency
Amplifier Output Stage.
DIM MILLIMETERS
A
B
C
D
d
15.9 MAX
4.8 MAX
_
20.0+0.3
_
2.0+0.3
D
1.0+0.3/-0.25
E
F
2.0
1.0
G
H
I
3.3 MAX
9.0
4.5
MAXIMUM RATING (Ta=25ᴱ)
d
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
P
J
P
T
2.0
M
K
L
M
P
Q
T
1.8 MAX
100
100
6
_
+
20.5 0.5
2.8
V
_
5.45+0.2
1
2
3
_
Φ3.2 0.2
+
V
0.6+0.3/-0.1
1. BASE
10
3
A
2. COLLECTOR (HEAT SINK)
3. EMITTER
IB
Base Current
A
Collector Power Dissipation
(Tc=25ᴱ)
PC
80
W
TO-3P(N)
Tj
Junction Temperature
150
ᴱ
ᴱ
Tstg
Storage Temperature Range
-55ᴕ150
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCB=100V, IE=0
VEB=6V, IC=0
Collector Cut-off Current
IEBO
-
-
-
-
10
10
-
ỌA
ỌA
V
Emitter Cut-off Current
V(BR)CEO
hFE (Note)
VCE(sat)
fT
IC=25mA, IB=0
Collector-Emitter Breakdown Voltage
DC Current Gain
100
55
-
-
VCE=4V, IC=2A
IC=4A, IB=0.4A
-
160
1.0
-
Collector-Emitter Saturation Voltage
Transition Frequency
-
V
MHz
pF
VCE=12V, IC=0.5A
VCB=10V, IE=0, f=1MHz
-
20
150
Cob
Collector Output Capacitance
-
-
Note : hFE Classification R:55~110, O:80~160
2001. 1. 10
Revision No : 1
1/2
TIP33C
VCE(sat) - IC
r th - t w
1
10
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
COMMON EMITTER
/C =10
I
5
3
0.5
0.3
C
B
0.1
1
0.05
0.03
0.5
0.3
0.01
0.001
0.1
0.01
0.1
1
10
1
30
100
300
1K 2K
3
10
BASE CURRENT I (A)
C
PULSE WIDTH t (sec)
w
f T - I E
h FE - IC
1K
30
V
=4V
V
CE
=-12V
CE
500
300
20
10
0
100
50
30
10
0.001
0.01
0.1
1
10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I (A)
C
EMITTER CURRENT I (A)
E
SAFE OPERATING AREA
Pc - Ta
-30
-10
100
I
MAX.(PULSED)*
C
Tc=Ta
INFINITE HEAT SINK
I
MAX
(CONTINUOUS)
C
80
60
40
20
-5
-3
-1
-0.5
-0.3
SINGLE NONREPETITIVE
*
PLUSE Ta=25 C
-0.1
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0
-0.05
-0.03
-1
100
150
0
25
50
75
125
AMBIENT TEMPERATURE Ta ( C)
-3
-10
-30
-100 -200
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
2001. 1. 10
Revision No : 1
2/2
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