TIP33C [KEC]

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER); 外延平面NPN晶体管(高功率放大器)
TIP33C
型号: TIP33C
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER)
外延平面NPN晶体管(高功率放大器)

晶体 放大器 晶体管 功率放大器 局域网 高功率电源
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中文:  中文翻译
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SEMICONDUCTOR  
TIP33C  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
HIGH POWER AMPLIFIER APPLICATION.  
A
Q
B
K
FEATURES  
Complementary to TIP34C.  
Recommended for 45W50W Audio Frequency  
Amplifier Output Stage.  
DIM MILLIMETERS  
A
B
C
D
d
15.9 MAX  
4.8 MAX  
_
20.0+0.3  
_
2.0+0.3  
D
1.0+0.3/-0.25  
E
F
2.0  
1.0  
G
H
I
3.3 MAX  
9.0  
4.5  
MAXIMUM RATING (Ta=25)  
d
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
P
J
P
T
2.0  
M
K
L
M
P
Q
T
1.8 MAX  
100  
100  
6
_
+
20.5 0.5  
2.8  
V
_
5.45+0.2  
1
2
3
_
Φ3.2 0.2  
+
V
0.6+0.3/-0.1  
1. BASE  
10  
3
A
2. COLLECTOR (HEAT SINK)  
3. EMITTER  
IB  
Base Current  
A
Collector Power Dissipation  
(Tc=25)  
PC  
80  
W
TO-3P(N)  
Tj  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
VCB=100V, IE=0  
VEB=6V, IC=0  
Collector Cut-off Current  
IEBO  
-
-
-
-
10  
10  
-
A  
A  
V
Emitter Cut-off Current  
V(BR)CEO  
hFE (Note)  
VCE(sat)  
fT  
IC=25mA, IB=0  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
100  
55  
-
-
VCE=4V, IC=2A  
IC=4A, IB=0.4A  
-
160  
1.0  
-
Collector-Emitter Saturation Voltage  
Transition Frequency  
-
V
MHz  
pF  
VCE=12V, IC=0.5A  
VCB=10V, IE=0, f=1MHz  
-
20  
150  
Cob  
Collector Output Capacitance  
-
-
Note : hFE Classification R:55~110, O:80~160  
2001. 1. 10  
Revision No : 1  
1/2  
TIP33C  
VCE(sat) - IC  
r th - t w  
1
10  
CURVES SHOULD BE APPLIED IN  
THERMAL LIMITED AREA.  
(SIGLE NONREPETITIVE PULSE)  
COMMON EMITTER  
/C =10  
I
5
3
0.5  
0.3  
C
B
0.1  
1
0.05  
0.03  
0.5  
0.3  
0.01  
0.001  
0.1  
0.01  
0.1  
1
10  
1
30  
100  
300  
1K 2K  
3
10  
BASE CURRENT I (A)  
C
PULSE WIDTH t (sec)  
w
f T - I E  
h FE - IC  
1K  
30  
V
=4V  
V
CE  
=-12V  
CE  
500  
300  
20  
10  
0
100  
50  
30  
10  
0.001  
0.01  
0.1  
1
10  
-0.01  
-0.03  
-0.1  
-0.3  
-1  
-3  
-10  
COLLECTOR CURRENT I (A)  
C
EMITTER CURRENT I (A)  
E
SAFE OPERATING AREA  
Pc - Ta  
-30  
-10  
100  
I
MAX.(PULSED)*  
C
Tc=Ta  
INFINITE HEAT SINK  
I
MAX  
(CONTINUOUS)  
C
80  
60  
40  
20  
-5  
-3  
-1  
-0.5  
-0.3  
SINGLE NONREPETITIVE  
*
PLUSE Ta=25 C  
-0.1  
CURVES MUST BE DERATED  
LINEARLY WITH INCREASE  
IN TEMPERATURE  
0
-0.05  
-0.03  
-1  
100  
150  
0
25  
50  
75  
125  
AMBIENT TEMPERATURE Ta ( C)  
-3  
-10  
-30  
-100 -200  
(V)  
COLLECTOR-EMITTER VOLTAGE V  
CE  
2001. 1. 10  
Revision No : 1  
2/2  

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