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KDV804 [KEC]

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT); 变容二极管硅外延平面二极管（ TUNING的单独谐振电路）

KDV804


元器件型号：	KDV804
生产厂家：	KEC(KOREA ELECTRONICS)
描述和应用：	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT) 变容二极管硅外延平面二极管（ TUNING的单独谐振电路）二极管变容二极管局域网
PDF文件：	总2页 (文件大小：159K)
下载文档：	下载PDF数据表文档文件
型号参数：KDV804参数

KDV804KS

SILICON EPITAXIAL PLANAR DIODE

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24 KEC

KDV804M

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT)

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18 KEC

KDV804S

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT)

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42 KEC

KDV804S

SOT-23 PACKAGE

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38 KEC

KDV804S_02

SOT-23 PACKAGE

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15 KEC

KDW2503N

5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for extremely low RDS(ON)

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13 TYSEMI

KDW2503N

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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10 KEXIN

KDW2504P

Dual P-Channel 2.5V Specified PowerTrench MOSFET

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9 KEXIN

KDW2504P

3.8 A, - 20 V. RDS(ON) = 0.043 Low gate charge High performance trench technology for extremely low RDS(ON)

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9 TYSEMI

KDW2521C

N-Channel 5.5 A, 20 V P-Channel -3.8 A, 20 V High performance trench technology for extremely low RDS

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26 TYSEMI

KDW2521C

Complementary PowerTrench MOSFET

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12 KEXIN

KDW258P

P-Channel 1.8V Specified PowerTrench MOSFET

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6 KEXIN

KDY

BUSS CABLE LIMITER

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0 ETC

KDY23

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3

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23 ETC

KDY24

TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-3

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35 ETC

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