NUC920-YB1C

ARM Cortex™-M0 32-BIT MICROCONTROLLER
暂无信息
NUVOTON

SV-A12-G/K

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

LCS2-4B-B/Q

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

ABM2-R4WAA2-R

Final Control Elements
暂无信息
MSYSTEM

FLLE2-P

Single phase EMI Filter
暂无信息
KEMET

GQM1555C2D9R2CB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗 医疗器械
MURATA

MEC1705-H-B-I-TF-TR

Keyboard and Embedded Controller for Notebook PC
PC
MICROCHIP

GRM155C8YA224ME01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗 医疗器械
MURATA

KSBS-162-J/Q

Plug-in Signal Conditioners K-UNIT
暂无信息
MSYSTEM

WF10W3742FTL

High Precision Thin Film Chip Resistors
暂无信息
WALSIN

RL-3015-100M

LOW PROFILE SMD POWER INDUCTOR
功率感应器
RENCO

GCM1885C2A271JA16#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗 医疗器械
MURATA

SV-A14-J/CE

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

LCS2-12D-C/Q

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

LCS2-4A-R/E

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

LCS2-12A-B/Q

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

LCS2-6D-J

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

LCS2-52-D

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

EEHZC1K680XR

Conductive Polymer Hybrid Aluminum Electrolytic Capacitors
暂无信息
PANASONIC

KSBS-CA-S

Plug-in Signal Conditioners K-UNIT
暂无信息
MSYSTEM

LCS2-5B-B

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

NZT605

NPN达林顿晶体管
光电二极管 晶体管 达林顿晶体管
ONSEMI

WA04P005XBTL

Mounting occupation area reduction
衰减器 射频 微波
WALSIN

LCS2-3D-D

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

ABM2-G4WAA2-M2

Final Control Elements
暂无信息
MSYSTEM

GD25LQ32DSIS

1.8V Uniform Sector Dual and Quad Serial Flash
暂无信息
GIGADEVICE

LCS2-2D-C/Q

Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

MEC1705-Q-C-I-TF

Keyboard and Embedded Controller for Notebook PC
PC
MICROCHIP

FCA-53-P

Space-saving Plug-in Signal Conditioners F-UNIT
暂无信息
MSYSTEM

IMZA120R020M1H

采用TO247-4封装的1200V 20mΩ  CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺,该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅(Si)基器件相比,SiC MOSFET具有诸多优势,例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此,CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。
开关 栅 DC-DC转换器 双极性晶体管 功率因数校正 二极管 栅极
INFINEON
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH

友情链接