IRFR1010ZTRL [KERSEMI]

Advanced Process Technology; 先进的工艺技术

IRFR1010ZTRL


型号：	IRFR1010ZTRL
厂家：	Kersemi Electronic Co., Ltd.
描述：	Advanced Process Technology 先进的工艺技术晶体晶体管开关脉冲局域网
文件：	总11页 (文件大小：4515K)
下载：	下载PDF数据表文档文件

IRFR1010ZTRLPBF

Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 IRF

IRFR1010ZTRLPBF

Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 INFINEON

IRFR1010ZTRPBF

Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 IRF

IRFR1010ZTRPBF

Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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3 INFINEON

IRFR1010ZTRR

Advanced Process Technology

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15 KERSEMI

IRFR1010ZTRRPBF

Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 IRF

IRFR1018EPBF

HEXFET TM Power MOSFET

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126 IRF

IRFR1018ETRLPBF

Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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0 INFINEON

IRFR1018ETRPBF

Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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2 IRF

IRFR1018ETRRPBF

Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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0 IRF

IRFR110

Power MOSFET

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125 VISHAY

IRFR110

Dynamic dV/dt Rating Repetitive Avalanche Rated

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33 KERSEMI

IRFR110

4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

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330 INTERSIL

IRFR110A

Advanced Power MOSFET

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38 FAIRCHILD

IRFR110A

Advanced Power MOSFET

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76 FAIRCHILD

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