IRFZ34PBF [KERSEMI]
Power MOSFET; 功率MOSFET
| 型号： | IRFZ34PBF |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Power MOSFET |
| 文件： | 总7页 (文件大小：4022K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFZ34, SiHFZ34
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
60
Available
• 175 °C Operating Temperature
• Fast Switching
RDS(on) (Ω)
VGS = 10 V
0.050
RoHS*
Qg (Max.) (nC)
Qgs (nC)
46
11
COMPLIANT
• Ease of Paralleling
Q
gd (nC)
22
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
Single
D
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220
IRFZ34PbF
SiHFZ34-E3
IRFZ34
Lead (Pb)-free
SnPb
SiHFZ34
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
T
C = 25 °C
30
21
Continuous Drain Current
VGS at 10 V
ID
TC =100°C
A
Pulsed Drain Currenta
IDM
120
Linear Derating Factor
0.59
200
W/°C
mJ
Single Pulse Avalanche Energyb
Maximum Power Dissipation
EAS
PD
TC = 25 °C
88
W
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
10
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 259 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).
c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
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1
IRFZ34, SiHFZ34
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.7
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
60
-
-
-
V
V/°C
V
-
0.065
2.0
-
-
-
-
-
-
4.0
100
25
VGS
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 18 Ab
=
20 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
250
0.050
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
VDS = 25 V, ID = 18 A
9.3
S
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
-
-
1200
600
100
-
-
-
VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS = 25 V,
pF
nC
f = 1.0 MHz, see fig. 5
-
46
ID = 30 A, VDS = 48 V,
see fig. 6 and 13b
V
GS = 10 V
Gate-Source Charge
Qgs
-
-
11
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
22
-
13
100
29
52
-
VDD = 30 V, ID = 30 A,
ns
RG = 12 Ω, RD = 1.0 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
Continuous Source-Drain Diode Current
IS
-
-
-
-
30
A
G
integral reverse
p - n junction diode
Pulsed Diode Forward Currenta
ISM
120
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 30 A, VGS = 0 Vb
-
-
-
-
1.6
230
1.4
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
120
0.7
ns
nC
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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IRFZ34, SiHFZ34
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFZ34, SiHFZ34
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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IRFZ34, SiHFZ34
RD
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T.
RG
+
-
A
VDD
VDS
IAS
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
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IRFZ34, SiHFZ34
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test
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IRFZ34, SiHFZ34
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode
forward drop
Inductor current
I
SD
Ripple ≤ 5 %
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
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