MBR10100 [KERSEMI]
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS; 肖特基势垒整流器10安培， 60〜 100伏特
| 型号： | MBR10100 |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS |
| 文件： | 总4页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1060, MBR1080,
MBR1090, MBR10100
MBR1060 and MBR10100 are Preferred Devices
SWITCHMODEt
Power Rectifiers
This series of SWITCHMODE power rectifiers uses the Schottky
Barrier principle with a platinum barrier metal. These state−of−the−art
devices have the following features:
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SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES, 60 to 100 VOLTS
Features
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Pb−Free Packages are Available*
3
1, 4
MARKING
DIAGRAM
4
Mechanical Characteristics
TO−220AC
CASE 221B
PLASTIC
AY WWG
B10x0
KA
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
1
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
3
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
B10x0 = Device Code
x
= 6, 8, 9 or 10
KA
= Diode Polarity
Device
Package
Shipping
50 Units/Rail
50 Units/Rail
MBR1060
TO−220
MBR1060G
TO−220
(Pb−Free)
MBR1080
TO−220
50 Units/Rail
50 Units/Rail
MBR1080G
TO−220
(Pb−Free)
MBR1090
TO−220
50 Units/Rail
50 Units/Rail
MBR1090G
TO−220
(Pb−Free)
MBR10100
TO−220
50 Units/Rail
50 Units/Rail
MBR10100G
TO−220
(Pb−Free)
1
MBR1060, MBR1080, MBR1090, MBR10100
MBR
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Unit
1060
1080
1090
10100
V
V
60
80
90
100
V
RRM
RWM
V
R
Average Rectified Forward Current (Rated V ) T = 133°C
I
F(AV)
10
20
A
A
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 133°C
R
C
Nonrepetitive Peak Surge Current
I
150
0.5
A
FSM
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
I
A
°C
RRM
T
J
*65 to +175
*65 to +175
10,000
Storage Temperature
T
°C
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
ELECTRICAL CHARACTERISTICS
R
R
2.0
60
°C/W
°C/W
q
JC
JA
q
Maximum Instantaneous Forward Voltage (Note 2)
v
V
F
(i = 10 Amps, T = 125°C)
0.7
0.8
F
C
(i = 10 Amps, T = 25°C)
F
C
(i = 20 Amps, T = 125°C)
0.85
0.95
F
C
(i = 20 Amps, T = 25°C)
F
C
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T = 125°C)
i
R
mA
6.0
C
(Rated dc Voltage, T = 25°C)
0.10
C
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR1060, MBR1080, MBR1090, MBR10100
50
20
10
T = 150°C
J
10
150°C
125°C
100°C
100°C
125°C
1.0
5.0
3.0
T = 25°C
J
0.1
1.0
0.5
25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
20
40
60
80
100
120
140
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
(HEATSINK)
= 16°C/W
R
q
JA
(NO HEATSINK)
= 60°C/W
R
q
JA
SQUARE WAVE
RATED VOLTAGE
APPLIED
dc
dc
dc
RATED VOLTAGE APPLIED
R
q
= 2°C/W
JC
1.0
0
1.0
0
SQUARE WAVE
110
120
130
140
150
160
0
20
40
60
80
100 120 140 160 180 200
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
10
T = 25°C
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
A
I /I = p
PK AV
I /I = 5.0
PK AV
I /I = 10
PK AV
dc
I
/I = 20
PK AV
SQUARE WAVE
1.0
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
, AVERAGE CURRENT (AMPS)
10
I
F(AV)
Figure 5. Forward Power Dissipation
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3
MBR1060, MBR1080, MBR1090, MBR10100
TO−220
PLASTIC
CASE 221B−04
ISSUE D
C
B
F
T
S
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.46
12.70
1.14
2.54
2.04
1.14
5.97
0.000
MAX
15.75
10.29
4.82
0.89
3.73
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
A
B
C
D
F
0.595
0.380
0.160
0.025
0.142
0.190
0.110
0.018
0.500
0.045
0.100
0.080
0.045
0.235
0.000
0.620
0.405
0.190
0.035
0.147
0.210
0.130
0.025
0.562
0.060
0.120
0.110
0.055
0.255
0.050
4
A
U
1
3
G
H
J
H
K
K
L
Q
R
S
T
L
R
D
U
J
G
相关型号：
MBR10100-BP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
MBR10100-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
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