MBR2035CT [KERSEMI]

SWITCHMODE POWER RECTIFIERS; ????开关模式电源整流器
MBR2035CT
型号: MBR2035CT
厂家: Kersemi Electronic Co., Ltd.    Kersemi Electronic Co., Ltd.
描述:

SWITCHMODE POWER RECTIFIERS
????开关模式电源整流器

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文件: 总5页 (文件大小:476K)
中文:  中文翻译
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. . . using the Schottky Barrier principle with a platinum barrier metal. These  
state–of–the–art devices have the following features:  
Guardring for Stress Protection  
Low Forward Voltage  
150°C Operating Junction Temperature  
Guaranteed Reverse Avalanche  
Epoxy Meets UL94, VO at 1/8″  
MBR2045CT is a  
Motorola Preferred Device  
SCHOTTKY BARRIER  
RECTIFIERS  
20 AMPERES  
Mechanical Characteristics:  
35 and 45 VOLTS  
Case: Epoxy, Molded  
Weight: 1.9 grams (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are  
Readily Solderable  
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds  
4
Shipped 50 units per plastic tube  
Marking: B2035, B2045  
1
3
2, 4  
1
2
3
CASE 221A–06  
TO–220AB  
PLASTIC  
Rating  
Symbol  
MBR2035CT  
MBR2045CT  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
35  
45  
Volts  
RRM  
RWM  
R
V
Average Rectified Forward Current (Rated V )  
I
20  
20  
20  
20  
Amps  
Amps  
Amps  
Amp  
R
F(AV)  
T
C
= 135°C  
Peak Repetitive Forward Current Per Diode Leg  
I
FRM  
(Rated V , Square Wave, 20 kHz) T = 135°C  
R
C
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
I
150  
1.0  
150  
1.0  
FSM  
RRM  
Peak Repetitive Reverse Surge Current  
(2.0 µs, 1.0 kHz) See Figure 11  
I
Operating Junction Temperature  
Storage Temperature  
T
65 to +150  
65 to +175  
1000  
65 to +150  
65 to +175  
1000  
°C  
°C  
J
T
stg  
Voltage Rate of Change (Rated V )  
dv/dt  
V/µs  
R
THERMAL CHARACTERISTICS  
Maximum Thermal Resistance, Junction to Case  
ELECTRICAL CHARACTERISTICS  
Maximum Instantaneous Forward Voltage (1)  
R
2.0  
2.0  
°C/W  
θJC  
v
Volts  
F
(i = 10 Amps, T = 125°C)  
0.57  
0.72  
0.84  
0.57  
0.72  
0.84  
F
F
C
C
C
(i = 20 Amps, T = 125°C)  
(i = 20 Amps, T = 25°C)  
F
Maximum Instantaneous Reverse Current (1)  
(Rated dc Voltage, T = 125°C)  
i
R
mA  
15  
0.1  
15  
0.1  
C
(Rated dc Voltage, T = 25°C)  
C
100  
100  
T
= 150°C  
J
T
= 150°C  
J
70  
50  
70  
50  
100°C  
25°C  
100°C  
25°C  
30  
20  
30  
20  
10  
7.0  
5.0  
10  
7.0  
5.0  
3.0  
2.0  
3.0  
2.0  
1.0  
1.0  
0.7  
0.5  
0.7  
0.5  
0.3  
0.2  
0.3  
0.2  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
v , INSTANTANEOUS VOLTAGE (VOLTS)  
v , INSTANTANEOUS VOLTAGE (VOLTS)  
F
F
Figure 1. Maximum Forward Voltage  
Figure 2. Typical Forward Voltage  
200  
100  
T
= 150°C  
J
125°C  
10  
100  
70  
100  
°
C
1.0  
75°C  
0.1  
50  
25°C  
0.01  
30  
20  
0.001  
0
5.0  
10  
15  
20  
25  
30  
35  
40  
45  
50  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
V
, REVERSE VOLTAGE (VOLTS)  
NUMBER OF CYCLES AT 60 Hz  
R
Figure 3. Maximum Reverse Current  
Figure 4. Maximum Surge Capability  
2
www.kersemi.com  
32  
28  
24  
20  
16  
12  
8.0  
40  
35  
30  
25  
20  
15  
10  
RATED VOLTAGE APPLIED  
RATED VOLTAGE APPLIED  
I
I
I
I
PK  
AV  
PK  
AV  
(RESISTIVE LOAD)  
(RESISTIVE LOAD)  
I
I
SQUARE  
WAVE  
SQUARE  
WAVE  
PK  
AV  
(CAPACITIVE LOAD)  
5
10  
20  
dc  
dc  
I
I
PK  
AV  
4.0  
0
(CAPACITIVE LOAD)  
20, 10, 5  
80  
5.0  
0
110  
120  
130  
140  
150  
160  
0
20  
40  
60  
100  
120  
C)  
140  
160  
T
, CASE TEMPERATURE (  
°C)  
T , AMBIENT TEMPERATURE (  
°
C
A
Figure 5. Current Derating, Infinite Heatsink  
Figure 6. Current Derating, R  
= 16°C/W  
JA  
10  
8.0  
6.0  
4.0  
20  
18  
dc  
RATED VOLTAGE APPLIED  
= 60 C/W  
SQUARE  
WAVE  
R
°
JA  
SINE WAVE  
RESISTIVE LOAD  
16  
I
I
PK  
AV  
(RESISTIVE LOAD)  
I
14  
PK  
(CAPACITIVE LOAD)  
5
I
12  
AV  
SQUARE  
WAVE  
10  
20  
10  
8.0  
6.0  
4.0  
dc  
T
= 150  
24  
°C  
2.0  
0
J
I
I
PK  
AV  
60  
(CAPACITIVE LOAD)  
20, 10, 5  
80  
2.0  
0
0
4.0  
I
8.0  
12  
16  
20  
28  
32  
0
20  
40  
100  
120  
C)  
140  
160  
, AVERAGE FORWARD CURRENT (AMPS)  
F(AV)  
T , AMBIENT TEMPERATURE (°  
A
Figure 7. Forward Power Dissipation  
Figure 8. Current Derating, Free Air  
1.0  
0.7  
0.5  
0.3  
0.2  
P
P
pk  
pk  
DUTY CYCLE, D = t /t  
PEAK POWER, P , is peak of an  
pk  
p 1  
t
p
0.1  
0.07  
0.05  
TIME  
equivalent square power pulse.  
[D + (1 – D) r(t + t ) + r(t ) – r(t )] where:  
JL  
t
1
T
T
= P  
R
JL  
JL  
pk  
θ
1
p
p
1
= the increase in junction temperature above the lead temperature.  
r(t) = normalized value of transient thermal resistance at time, t, i.e.:  
r(t + t ) = normalized value of transient thermal resistance at time,  
0.03  
0.02  
1
p
t
+ t , etc.  
1
p
0.01  
0.01  
0.1  
1.0  
10  
100  
1000  
t, TIME (ms)  
Figure 9. Thermal Response  
www.kersemi.com  
3
1500  
1000  
HIGH FREQUENCY OPERATION  
Since current flow in a Schottky rectifier is the result of majority  
carrier conduction, it is not subject to junction diode forward and  
reverse recovery transients due to minority carrier injection and  
stored charge. Satisfactory circuit analysis work may be performed  
by using a model consisting of an ideal diode in parallel with a  
variable capacitance. (See Figure 10.)  
700  
500  
Rectification efficiency measurements show that operation will  
be satisfactory up to several megahertz. For example, relative  
waveform rectification efficiency is approximately 70 percent at  
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is  
0.28 at this frequency, whereas perfect rectification would yield  
0.406 for sine wave inputs. However, in contrast to ordinary  
junction diodes, the loss in waveform efficiency is not indicative of  
power loss; it is simply a result of reverse current flow through the  
diode capacitance, which lowers the dc output voltage.  
MAXIMUM  
300  
TYPICAL  
5.0  
200  
150  
0.05 0.1  
0.2  
0.5 1.0  
2.0  
10  
20  
50  
V
, REVERSE VOLTAGE (VOLTS)  
R
Figure 10. Capacitance  
+150 V, 10 mAdc  
2.0 k  
V
12 Vdc  
CC  
+
D.U.T.  
12 V  
100  
4.0 µF  
2N2222  
2.0  
µs  
1.0 kHz  
CURRENT  
AMPLITUDE  
ADJUST  
2N6277  
100  
CARBON  
0–10 AMPS  
1.0 CARBON  
1N5817  
Figure 11. Test Circuit for dv/dt and  
Reverse Surge Current  
4
www.kersemi.com  
NOTES:  
SEATING  
PLANE  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
–T–  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
C
B
F
T
S
4
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.46  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
A
K
Q
Z
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.018  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
1
2
3
U
H
L
R
V
J
G
T
U
V
D
N
Z
0.080  
2.04  
CASE 221A–06  
(TO–220AB)  
ISSUE Y  
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5

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