MBRF1090 [KERSEMI]

Trench MOS Schottky technology; 沟槽MOS肖特基技术
MBRF1090
型号: MBRF1090
厂家: Kersemi Electronic Co., Ltd.    Kersemi Electronic Co., Ltd.
描述:

Trench MOS Schottky technology
沟槽MOS肖特基技术

二极管 瞄准线 功效 局域网
文件: 总4页 (文件大小:1967K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR(F,B)1090 & MBR(F,B)10100  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AC  
ITO-220AC  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
1
MBR1090  
MBR10100  
PIN 1  
MBRF1090  
MBRF10100  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB1090  
MBRB10100  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
10 A  
VRRM  
IFSM  
90 V, 100 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
VF  
0.65 V  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
VRWM  
VDC  
MBR1090  
MBR10100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
90  
90  
90  
V
V
V
A
100  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
10  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
0.5  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
1500  
Isolation voltage (ITO-220AC only)  
From terminal to heatsink t = 1 min  
VAC  
V
www.kersemi.com  
476  
MBR(F,B)1090 & MBR(F,B)10100  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
IF = 10 A  
IF = 10 A  
IF = 20 A  
T
C = 25 °C  
0.80  
0.65  
0.75  
Maximum instantaneous forward voltage (1)  
TC = 125 °C  
TC = 125 °C  
VF  
V
Maximum reverse current at working peak  
reverse voltage (2)  
TJ = 25 °C  
TJ = 100 °C  
100  
6.0  
µA  
mA  
IR  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR  
MBRF  
MBRB  
UNIT  
RθJA  
RθJC  
60  
2.0  
-
60  
2.0  
Typical thermal resistance  
°C/W  
3.5  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AC  
ITO-220AC  
TO-263AB  
TO-263AB  
PREFERRED P/N  
MBR10100-E3/4W  
MBRF10100-E3/4W  
MBRB10100-E3/4W  
MBRB10100-E3/8W  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
1.845  
4W  
4W  
4W  
8W  
1.661  
50/tube  
Tube  
1.384  
50/tube  
Tube  
1.384  
800/reel  
Tape and reel  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
10  
160  
140  
120  
100  
80  
Resistive or Inductive Load  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
8
6
4
2
0
60  
40  
1
50  
150  
0
100  
10  
100  
Case Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.kersemi.com  
477  
MBR(F,B)1090 & MBR(F,B)10100  
100  
100  
10  
Junction to Case  
TJ = 150 °C  
10  
TJ = 125 °C  
1
1
0.1  
TJ = 25 °C  
MBR(B)  
100  
0.01  
0.1  
0.01  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
Instantaneous Forward Voltage (V)  
0.1  
1
10  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 6. Typical Transient Thermal Impedance  
100  
10  
1
TJ = 150 °C  
Junction to Case  
10  
TJ = 125 °C  
1
0.1  
0.1  
0.01  
0.01  
TJ = 25 °C  
MBRF  
0.001  
0.001  
10  
20  
30  
40  
50  
60  
80  
100  
0.1  
1
10  
100  
70  
90  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (s)  
Figure 4. Typical Reverse Characteristics  
Figure 7. Typical Transient Thermal Impedance  
10 000  
1000  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
10  
1
100  
10  
Reverse Voltage (V)  
Figure 5. Typical Junction Capacitance  
www.kersemi.com  
478  
MBR(F,B)1090 & MBR(F,B)10100  
ITO-220AC  
TO-220AC  
0.404 (10.26)  
0.190 (4.83)  
0.384 (9.75)  
0.170 (4.32)  
0.415(10.54)MAX.  
0.076 (1.93) REF.  
0.110 (2.79)  
0.154(3.91)  
0.185 (4.70)  
DIA.  
0.370(9.40)  
0.360(9.14)  
0.148(3.74)  
0.175 (4.44)  
0.055(1.39)  
0.045(1.14)  
0.100 (2.54)  
7° REF.  
0.076 (1.93) REF.  
0.113(2.87)  
0.103(2.62)  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
45° REF.  
0.122 (3.08) DIA.  
0.145(3.68)  
0.135(3.43)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
7° REF.  
0.580 (14.73)  
0.603(15.32)  
0.573(14.55)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
0.350(8.89)  
0.330(8.38)  
0.635(16.13)  
0.625(15.87)  
1
2
PIN  
1
2
1.148(29.16)  
1.118(28.40)  
7° REF.  
0.191 (4.85)  
0.160(4.06)  
0.140(3.56)  
0.110 (2.79)  
0.100 (2.54)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.057(1.45)  
0.560(14.22)  
0.530(13.46)  
0.057 (1.45)  
0.045 (1.14)  
PIN 1  
PIN 2  
0.045(1.14)  
CASE  
0.105(2.67)  
0.095(2.41)  
0.035 (0.89)  
0.025 (0.64)  
0.205 (5.21)  
0.195 (4.95)  
0.037(0.94)  
0.027(0.68)  
0.025 (0.64)  
0.022 (0.56)  
0.014 (0.36)  
0.015 (0.38)  
0.028 (0.71)  
0.205 (5.20)  
0.195(4.95)  
0.020 (0.51)  
TO-263AB  
0.41 (10.45)  
0.380 (9.65)  
0.190 (4.83)  
0.160 (4.06)  
Mounting Pad Layout  
0.055 (1.40)  
0.045 (1.14)  
0.42  
MIN.  
0.245 (6.22)  
MIN  
(10.66)  
K
0.33  
(8.38)  
0.055 (1.40)  
0.047 (1.19)  
MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
1
K
0.591(15.00)  
2
0.670 (17.02)  
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.15  
(3.81)  
0.037 (0.940)  
0.027 (0.686)  
MIN.  
0.08  
MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.105 (2.67)  
0.095 (2.41)  
(2.032)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
(0.095) (2.41)  
www.kersemi.com  
479  

相关型号:

MBRF1090-E3/45

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

MBRF1090-E3/4W

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

MBRF1090-HE3/45

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

MBRF1090CT

Dual High-Voltage Schottky Barrier Rectifiers
GOOD-ARK

MBRF1090CT

Isolated 10.0 AMPS. Schottky Barrier Rectifiers
TSC

MBRF1090CT

SCHOTTKY BARRIER RECTIFIER
LUNSURE

MBRF1090CT

Dual Common-Cathode High-Voltage Schottky Rectifier
VISHAY

MBRF1090CT

TO-220F Plastic-Encapsulate Diodes
TGS

MBRF1090CT

Plastic material used carries Underwriters Laboratory Classifications 94V-0
KERSEMI

MBRF1090CT-E3/4W

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, ITO-220AB, 3 PIN
VISHAY

MBRF1090CT-M3/4W

暂无描述
VISHAY

MBRF1090CT_10

Dual Common-Cathode High-Voltage Schottky Rectifier
VISHAY