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元器件品牌
IRF3205ZS
[KERSEMI]
Advanced Process Technology Ultra Low On-Resistance; 先进的工艺技术超低导通电阻
元器件型号：
IRF3205ZS
生产厂家：
Kersemi Electronic Co., Ltd.
描述和应用：
Advanced Process Technology Ultra Low On-Resistance
先进的工艺技术超低导通电阻
晶体 晶体管 开关 脉冲 局域网
PDF文件：
总12页 (文件大小：5098K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF3205ZS参数
查看货源
IRF3205ZSPBF
AUTOMOTIVE MOSFET
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156
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102
IRF
IRF3205ZSTRL
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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156
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4
IRF
IRF3205ZSTRLPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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3
INFINEON
IRF3205ZSTRLPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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156
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1
IRF
IRF320LSPBF
HEXFET㈢ Power MOSFET
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156
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218
IRF
IRF321
N-Channel Power MOSFETs, 3.0 A, 350-400 V
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156
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63
FAIRCHILD
IRF321
N-CHANNEL POWER MOSFETS
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156
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38
SAMSUNG
IRF321
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
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156
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28
INTERSIL
IRF322
N-Channel Power MOSFETs, 3.0 A, 350-400 V
Warning
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156
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42
FAIRCHILD
IRF322
N-CHANNEL POWER MOSFETS
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156
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36
SAMSUNG
IRF322
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
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156
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25
INTERSIL
IRF-322+/-10%
General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED
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156
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0
VISHAY
IRF-322+/-10%
General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED
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156
-
0
VISHAY
IRF-3220UH+-10%EBE2
General Purpose Inductor, 220uH, 10%, Ferrite-Core,
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156
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0
VISHAY
IRF323
N-Channel Power MOSFETs, 3.0 A, 350-400 V
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on line
156
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48
FAIRCHILD
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