关闭背景特效

IRF640NLPBF [KERSEMI]

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature; 先进的工艺技术动态的dv / dt额定值175工作温度

IRF640NLPBF


元器件型号：	IRF640NLPBF
生产厂家：	Kersemi Electronic Co., Ltd.
描述和应用：	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature 先进的工艺技术动态的dv / dt额定值175工作温度
PDF文件：	总11页 (文件大小：8242K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF640NLPBF参数

IRF640NPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

59 KERSEMI

IRF640NPBF

HEXFET㈢ Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

638 IRF

IRF640NS

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

137 FAIRCHILD

IRF640NS

HEXFET Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

228 IRF

IRF640NS

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

575 IRF

IRF640NSPBF

HEXFET㈢ Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

150 IRF

IRF640NSPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

24 KERSEMI

IRF640NSTRL

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

5 IRF

IRF640NSTRLPBF

Advanced Process Technology

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

74 IRF

IRF640NSTRLPBF

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

17 IRF

IRF640NSTRRPBF

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

3 INFINEON

IRF640NSTRRPBF

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

4 IRF

IRF640PBF

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

12 KERSEMI

IRF640PBF

Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

156 VISHAY

IRF640R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-220AB

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-

79 ETC

©2020 ICPDF网联系我们和版权申明