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IRF640NSPBF [KERSEMI]

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature; 先进的工艺技术动态的dv / dt额定值175工作温度

IRF640NSPBF


元器件型号：	IRF640NSPBF
生产厂家：	Kersemi Electronic Co., Ltd.
描述和应用：	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature 先进的工艺技术动态的dv / dt额定值175工作温度
PDF文件：	总11页 (文件大小：8242K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF640NSPBF参数

IRF640NSTRL

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3

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5 IRF

IRF640NSTRLPBF

Advanced Process Technology

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74 IRF

IRF640NSTRLPBF

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

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17 IRF

IRF640NSTRRPBF

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

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3 INFINEON

IRF640NSTRRPBF

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

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4 IRF

IRF640PBF

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching

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12 KERSEMI

IRF640PBF

Power MOSFET

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156 VISHAY

IRF640R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-220AB

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79 ETC

IRF640S

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

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218 STMICROELECTR

IRF640S

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

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186 IRF

IRF640S

N-channel TrenchMOS transistor

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95 PHILIPS

IRF640S

Power MOSFET

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189 VISHAY

IRF640S

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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2 MOTOROLA

IRF640S

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3

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11 VISHAY

IRF640SPBF

Power MOSFET

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65 VISHAY

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