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元器件品牌
IRF830APBF
[KERSEMI]
Low Gate Charge Qg Results in Simple Drive Requirement; 低栅极电荷Qg结果简单驱动要求
元器件型号：
IRF830APBF
生产厂家：
Kersemi Electronic Co., Ltd.
描述和应用：
Low Gate Charge Qg Results in Simple Drive Requirement
低栅极电荷Qg结果简单驱动要求
晶体 栅极 晶体管 开关 脉冲 驱动 局域网
PDF文件：
总7页 (文件大小：3490K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF830APBF参数
查看货源
IRF830AS
Power MOSFET
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25
VISHAY
IRF830AS
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
Warning
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90
IRF
IRF830ASPBF
Power MOSFET
Warning
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156
-
18
VISHAY
IRF830ASPBF
HEXFET㈢ Power MOSFET
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156
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41
IRF
IRF830ASTRL
Power MOSFET
Warning
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156
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12
VISHAY
IRF830ASTRL
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB
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73
ETC
IRF830ASTRLPBF
Power MOSFET
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156
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16
VISHAY
IRF830ASTRLPBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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1
IRF
IRF830ASTRR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB
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39
ETC
IRF830ASTRRPBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Warning
: Undefined variable $rtag in
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156
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1
IRF
IRF830B
500V N-Channel MOSFET
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156
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423
FAIRCHILD
IRF830BJ69Z
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
Warning
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156
-
0
FAIRCHILD
IRF830BPBF
TRANSISTOR POWER, FET, FET General Purpose Power
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156
-
0
VISHAY
IRF830D1
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
MOTOROLA
IRF830D1
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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156
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0
MOTOROLA
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