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元器件品牌
IRFI640GPBF
[KERSEMI]
Power MOSFET; 功率MOSFET
元器件型号：
IRFI640GPBF
生产厂家：
Kersemi Electronic Co., Ltd.
描述和应用：
Power MOSFET
功率MOSFET
PDF文件：
总7页 (文件大小：4318K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFI640GPBF参数
查看货源
IRFI644
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)
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IRF
IRFI644
250V N-Channel MOSFET
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FAIRCHILD
IRFI644
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)
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10
IRF
IRFI644
250V N-Channel MOSFET
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FAIRCHILD
IRFI644-013
Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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0
IRF
IRFI644A
Advanced Power MOSFET
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18
FAIRCHILD
IRFI644A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA
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15
ETC
IRFI644A
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
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0
SAMSUNG
IRFI644B
250V N-Channel MOSFET
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25
FAIRCHILD
IRFI644G
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)
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75
IRF
IRFI644G
Power MOSFET
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35
VISHAY
IRFI644G-002
Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
INFINEON
IRFI644G-002PBF
Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
INFINEON
IRFI644G-003PBF
Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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INFINEON
IRFI644G-004PBF
Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
INFINEON
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