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元器件品牌
IRFR110TRRPBF
[KERSEMI]
Dynamic dV/dt Rating Repetitive Avalanche Rated; 动态的dv / dt额定值额定重复性雪崩
元器件型号：
IRFR110TRRPBF
生产厂家：
Kersemi Electronic Co., Ltd.
描述和应用：
Dynamic dV/dt Rating Repetitive Avalanche Rated
动态的dv / dt额定值额定重复性雪崩
PDF文件：
总7页 (文件大小：3888K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFR110TRRPBF参数
查看货源
IRFR111
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4.4A I(D) | TO-252
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45
ETC
IRFR1111
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A)
Warning
: Undefined variable $rtag in
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34
IRF
IRFR120
8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs
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156
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161
INTERSIL
IRFR120
HEXFET POWER MOSFET
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156
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664
IRF
IRFR120
HEXFET POWER MOSFET
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156
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271
IRF
IRFR120
IRFR120
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on line
156
-
236
VISHAY
IRFR-120
Power MOSFET
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: Undefined variable $rtag in
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156
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32
VISHAY
IRFR1205
Ultra Low On-Resistance
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156
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83
KERSEMI
IRFR1205
HEXFET® Power MOSFET
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156
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64
SHENZHENFREES
IRFR1205
Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
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1089
IRF
IRFR1205PBF
ULTRA LOW ON-RESISTANCE
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21
KERSEMI
IRFR1205PBF
HEXFET Power MOSFET
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122
IRF
IRFR1205PBF
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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3
IRF
IRFR1205TR
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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156
-
0
IRF
IRFR1205TRL
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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0
IRF
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