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元器件品牌
IRFR9120
[KERSEMI]
Dynamic dV/dt Rating; 动态的dv / dt额定值
元器件型号：
IRFR9120
生产厂家：
Kersemi Electronic Co., Ltd.
描述和应用：
Dynamic dV/dt Rating
动态的dv / dt额定值
晶体 晶体管 开关
PDF文件：
总7页 (文件大小：4283K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFR9120参数
查看货源
IRFR91209A
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.6A I(D) | TO-252AA
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50
ETC
IRFR9120N
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)
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419
IRF
IRFR9120N
HEXFET® Power MOSFET
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156
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145
SHENZHENFREES
IRFR9120NPBF
HEXFET POWER MOSFET
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156
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22
KERSEMI
IRFR9120NPBF
ULTRA LOW ON-RESISTANCE
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156
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16
KERSEMI
IRFR9120NPBF
HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A )
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95
IRF
IRFR9120NPBF
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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1
IRF
IRFR9120NPBF
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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2
INFINEON
IRFR9120NTRLPBF
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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156
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0
INFINEON
IRFR9120NTRPBF
Ultra Low On-Resistance
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156
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86
IRF
IRFR9120NTRPBF
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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156
-
0
INFINEON
IRFR9120NTRR
HEXFET Power MOSFET
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22
KERSEMI
IRFR9120NTRRPBF
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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156
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1
IRF
IRFR9120PBF
Dynamic dV/dt Rating
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156
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20
KERSEMI
IRFR9120PBF
Power MOSFET
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8
KERSEMI
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