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元器件品牌
IRFU4104PBF
[KERSEMI]
Advanced Process Technology; 先进的工艺技术
元器件型号：
IRFU4104PBF
生产厂家：
Kersemi Electronic Co., Ltd.
描述和应用：
Advanced Process Technology
先进的工艺技术
PDF文件：
总11页 (文件大小：4260K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFU4104PBF参数
查看货源
IRFU4105
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A)
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52
IRF
IRFU4105
Ultra Low On-Resistance
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156
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127
KERSEMI
IRFU4105PBF
Ultra Low On-Resistance
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156
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12
KERSEMI
IRFU4105PBF
Ultra Low On-Resistance
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156
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5
KERSEMI
IRFU4105PBF
HEXFET Power MOSFET
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156
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19
IRF
IRFU4105PBF
Power Field-Effect Transistor,
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0
INFINEON
IRFU4105PBF
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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0
IRF
IRFU4105Z
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)
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41
IRF
IRFU4105ZPBF
AUTOMOTIVE MOSFET
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20
IRF
IRFU410A
Advanced Power MOSFET
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156
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53
FAIRCHILD
IRFU410ATU
暂无描述
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156
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0
FAIRCHILD
IRFU410B
500V N-Channel MOSFET
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156
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27
FAIRCHILD
IRFU410B
Power Field-Effect Transistor, 0.9A I(D), 500V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Warning
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156
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0
FAIRCHILD
IRFU410BTU
暂无描述
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156
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0
FAIRCHILD
IRFU411
Power Field-Effect Transistor, 0.5A I(D), 450V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
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0
SAMSUNG
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