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2SA1035-S

更新时间：2024-09-18 22:05:23
品牌：KEXIN
描述：PNP Transistors

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PCB计价

2SA1035-S 概述

PNP Transistors

2SA1035-S 数据手册

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SMD Type  
Transistors  
PNP Transistors  
2SA1035  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
● Low noise voltage NV.  
1
2
● High foward current transfer ratio hFE  
● Complementary to 2SC2406.  
.
+0.1  
+0.05  
-0.01  
0.95  
-0.1  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-55  
Unit  
V
-55  
V
-5  
V
Collector current  
-50  
mA  
mA  
mW  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
-100  
200  
PC  
Tj  
150  
Tstg  
-55 to +150  
■ Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= -100 μA， I =0  
Ic= -2 mA， I =0  
= -100μA， I =0  
Min  
-55  
-55  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Collector- emittercut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
I
I
CBO  
CEO  
V
V
V
CB= -50 V , I  
CE= -40 V , I  
EB= -5V , I  
E
B
=0  
=0  
-100  
-1  
nA  
uA  
nA  
I
EBO  
C
=0  
-100  
-0.6  
-1.2  
-1.0  
700  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-100 mA, I  
B
B
=-10mA  
=-10mA  
V
V
C=-100 mA, I  
V
BE  
V
V
V
BE=-1V, I  
CE= -5V, I  
CE = –10V, I  
= 100kΩ , Function = FLAT  
CB= -5V, I = -2mA,f=200MHz  
C
=-100mA  
= -2mA  
= –1mA, GV = 80dB  
DC current gain  
h
FE  
C
180  
C
Noise voltage  
NV  
150  
mV  
R
g
Transition frequency  
f
T
V
E
200  
MHz  
■ Classification of hfe  
Type  
Range  
Marking  
2SA1035-R  
180-360  
HR  
2SA1035-S  
260-520  
HS  
2SA1035-T  
360-700  
HT  
1
www.kexin.com.cn  
SMD Type  
Transistors  
PNP Transistors  
2SA1035  
■ Typical Characterisitics  
PC — Ta  
IC — VCE  
IC — IB  
240  
–160  
–160  
–140  
–120  
–100  
–80  
–60  
–40  
–20  
0
Ta=25˚C  
VCE=–5V  
Ta=25˚C  
–140  
–120  
–100  
–80  
–60  
–40  
–20  
0
200  
160  
120  
80  
IB=–350µA  
–300µA  
–250µA  
–200µA  
–150µA  
–100µA  
–50µA  
40  
0
0
20 40 60 80 100 120 140 160  
0
–2  
–4  
–6  
–8  
–10 –12  
0
– 0.1 – 0.2 – 0.3 – 0.4 – 0.5  
(
)
(
V
)
(
)
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
Base current IB mA  
IB — VBE  
IC — VBE  
VCE(sat) — IC  
–800  
–700  
–600  
–500  
–400  
–300  
–200  
–100  
0
–120  
–100  
IC/IB=10  
VCE=–5V  
Ta=25˚C  
VCE=–5V  
–30  
–10  
25˚C  
Ta=75˚C  
–100  
–80  
–60  
–40  
–20  
0
–25˚C  
–3  
–1  
– 0.3  
– 0.1  
Ta=75˚C  
25˚C  
–25˚C  
– 0.03  
– 0.01  
0
– 0.2 – 0.4 – 0.6 – 0.8  
–1.0  
0
– 0.4 – 0.8  
–1.2  
–1.6  
–2.0  
–0.1 –0.3  
–1  
–3  
–10 –30 –100  
( )  
V
(
V
)
(
)
Base to emitter voltage VBE  
Base to emitter voltage VBE  
Collector current IC mA  
hFE — IC  
fT — IE  
Cob — VCB  
600  
500  
400  
300  
200  
100  
0
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
20  
18  
16  
14  
12  
10  
8
VCB=–5V  
Ta=25˚C  
VCE=–5V  
IE=0  
f=1MHz  
Ta=25˚C  
Ta=75˚C  
25˚C  
–25˚C  
6
4
2
0
0.1  
0
– 0.1 – 0.3  
–1  
–3  
–10 –30 –100  
0.3  
1
3
10  
30  
100  
– 0.1 – 0.3  
–1  
–3  
–10 –30 –100  
(
)
(
)
( )  
Collector to base voltage VCB V  
Collector current IC mA  
Emitter current IE mA  
2
www.kexin.com.cn  
SMD Type  
Transistors  
PNP Transistors  
2SA1035  
■ Typical Characterisitics  
NV — VCE  
NV — VCE  
NV — IC  
160  
300  
160  
140  
120  
100  
80  
IC=–1mA  
GV=80dB  
Function=RIAA  
240  
IC=–1mA  
GV=80dB  
Function=FLAT  
VCE=–10V  
GV=80dB  
Function=FLAT  
140  
120  
100  
80  
Rg=100kΩ  
Rg=100kΩ  
180  
Rg=100kΩ  
120  
60  
60  
22kΩ  
22kΩ  
22kΩ  
40  
40  
4.7kΩ  
60  
4.7kΩ  
4.7kΩ  
20  
20  
0
–1  
0
–1  
0
–3  
–10  
–30  
–100  
–3  
–10  
–30  
–100  
– 0.01  
– 0.03  
– 0.1  
– 0.3  
–1  
( )  
V
(
V
)
(
)
Collector to emitter voltage VCE  
Collector to emitter voltage VCE  
Collector current IC mA  
NV — IC  
NV — Rg  
NV — Rg  
300  
160  
300  
240  
180  
120  
60  
VCE=–10V  
GV=80dB  
Function=RIAA  
VCE=–10V  
GV=80dB  
Function=RIAA  
VCE=–10V  
GV=80dB  
Function=FLAT  
140  
120  
100  
80  
240  
180  
120  
60  
60  
Rg=100kΩ  
IC=–1mA  
40  
22kΩ  
IC=–1mA  
– 0.5mA  
4.7kΩ  
– 0.1mA  
20  
– 0.5mA  
3
– 0.1mA  
0
0
0
– 0.01  
– 0.03  
– 0.1  
– 0.3  
–1  
1
3
10  
30  
100  
1
10  
30  
100  
(
)
(
)
(
)
Collector current IC mA  
Signal source resistance Rg kΩ  
Signal source resistance Rg kΩ  
3
www.kexin.com.cn  

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