2SA1202-O [KEXIN]
PNP Transistors;
| 型号： | 2SA1202-O |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 放大器 晶体管 |
| 文件： | 总2页 (文件大小：1298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SA1202
1.70 0.1
Features
Suitable for Driver of 30 to 35 Watts Audio Amplifier
Small Flat Package
0.42 0.1
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2882
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-80
-80
V
-5
V
-400
-80
mA
mA
Base Current
IB
PC
500
Collector Power Dissipation
mW
PC *
Tj
1000
150
Jumction temperature
Storage temperature Range
Tstg
-55 to +150
* Mounted on ceramic substrate (250 mm2 x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
-80
-80
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
Ic= -100 μA， I
Ic= -10 mA， I
= -100μA， I
CB= -80 V , I =0
EB= -5V , I =0
E
=0
=0
=0
CEO
EBO
B
I
E
C
I
CBO
EBO
V
V
E
-100
-100
-0.4
-1.2
-0.8
240
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
I
C
=-200 mA, I
B
B
=- 20mA
=- 20mA
V
C
C
=-200 mA, I
V
BE
=-5 mA, VCE= -2V
-0.55
70
h
FE(1)
FE(2)
V
V
V
V
CE= -2V, I
CE= -2V, I
C
= -50mA
DC current gain
h
C= -200mA
40
Output capacitance
Transition frequency
C
ob
CE= -10V,I
E
=0,f=1MHz
= -10mA
14
pF
fT
CE= -10V, I
E
120
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SA1202-O
70-140
FO
2SA1202-Y
120-240
FY
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SA1202
■ Typical Characterisitics
2
www.kexin.com.cn
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