2SA1314-A [KEXIN]
PNP Transistors;
| 型号： | 2SA1314-A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 放大器 晶体管 |
| 文件： | 总2页 (文件大小：1225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SA1314
Features
1.70 0.1
Low Saturation Voltage
: VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA)
Small Flat Package
0.42 0.1
0.46 0.1
Complementary to 2SC2982
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-20
V
A
-10
-6
Collector Current - Continuous
Collector Current - Pulsed *1
Base Current
I
C
-2
-4
I
CP
I
B
-2
Collector Power Dissipation
Junction Temperature
P
C
500
mW
T
J
150
℃
Storage Temperature range
Tstg
-55 to 150
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Ic= -1mA， I =0
Ic= -10 mA， I =0
= -1mA， I =0
CB= -20 V , I =0
EB= -6V , I =0
Min
-20
-10
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
E
I
E
C
I
CBO
EBO
V
V
E
-100
-100
-0.5
-1.2
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-2A, I
B
B
=- 50mA
=- 50mA
-0.2
V
C=-2A, I
V
BE
V
V
V
V
V
CE= -1V , I
C
=-2A
-0.83 -1.5
h
FE(1)
FE(2)
CE= -1V, I
CE= -1V, I
C
= -0.5A
140
60
600
120
DC current gain
h
C= -4A
Collector output capacitance
Transition frequency
C
ob
CB= -10V, I
E
=0,f=1MHz
50
pF
f
T
CE= -1V, I = -0.5A
C
140
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SA1314-A
140-280
TA
2SA1314-B
200-400
TB
2SA1314-C
300-600
TC
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SA1314
■ Typical Characterisitics
2
www.kexin.com.cn
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