概述
数据手册2SB710A-R 概述
PNP Transistors
2SB710A-R 数据手册
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PDF下载SMD Type
Transistors
PNP Transistors
2SB710A
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
■ Features
3
● Large collector current I
C
● Complimentary to 2SD602A.
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-60
Unit
V
VCBO
VCEO
VEBO
-50
-5
Collector Current - Continuous
Collector current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
-500
-1
mA
A
I
CP
P
C
200
150
mW
T
J
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA， I =0
Ic= -10 mA， I =0
= -100μA， I =0
CB= - 50V , I =0
EB= -5V , I =0
Min
-60
-50
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=-300 mA, I
B
=-30mA
=-30mA
-0.35 -0.6
V
C=-300 mA, I
B
-1.1
-1.5
340
V
V
V
V
CE= -10V, I
CE= -10V, I
CB= -10V, I
CE= -10V, I
C
= -150mA
= -500mA
85
40
DC current gain
hFE
C
Collector output capacitance
Transition frequency
C
ob
T
E
= 0,f=1MHz
= 50mA,f=200MHz
6
15
pF
f
E
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SB710A- Q
85-170
2SB710A- R
120-240
DR
2SB710A- S
170-340
DS
DQ
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SB710A
■ Typical Characterisitics
PC - Ta
IC VCE
IC IB
−1200
−800
−700
−600
−500
−400
−300
−200
−100
0
240
Ta = 25°C
VCE = −10 V
Ta = 25°C
−1000
200
160
120
80
−800
IB =−10 mA
−9 mA
−8 mA
−600
−7 mA
−6 mA
−5 mA
−4 mA
−400
−3 mA
−2 mA
−200
40
−1 mA
0
0
0
–2
–4
–6
–8 –10 –12
0
−2
−4
−6
−8
−10
0
40
80
120
160
(
V
)
(
)
Collector-emitter voltage V
Base current IB mA
(
)
Ambient temperature Ta °C
CE
VCE(sat) - IC
VBE(sat) IC
hFE IC
−100
−10
−10
600
500
400
300
200
100
0
IC/IB = 10
IC/IB = 10
VCE = −10 V
−1
− 0.1
Ta=75°C
25°C
25°C
Ta = −25°C
−1
−25°C
75°C
Ta = 75°C
25°C
−25°C
− 0.1
− 0.01
− 0.01
− 0.001
−1
−10
−100
−1000
−1
−10
−100
−1000
− 0.01
− 0.1
−1
−10
(
)
(
)
Collector current I C mA
Collector current IC mA
(
A
)
Collector current IC
fT
IE
Cob VCB
VCER RBE
−120
−100
−80
−60
−40
−20
0
240
200
160
120
80
24
20
16
12
8
IE= 0
f= 1 MHz
Ta = 25°C
I
= −2 mA
VCB = −10 V
Ta = 25°C
C
Ta = 25°C
2SB0710A
40
4
0
0
−1
1
10
100
1000
1
10
Emitter current IE mA
100
−10
−100
(
)
(
)
(
)
Base-emitter resistance RBE kΩ
Collector-base voltage VCB
V
2
www.kexin.com.cn
2SB710A-R 相关器件
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| 2SB710A-R-HF | KEXIN | PNP Transistors | 获取价格 |
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| 2SB710A-S | KEXIN | PNP Transistors | 获取价格 |
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| 2SB710A-S-HF | KEXIN | PNP Transistors | 获取价格 |
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| 2SB710AQ | ETC | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236 | 获取价格 |
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| 2SB710AS | ETC | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236 | 获取价格 |
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| 2SB710ATMG | PANASONIC | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
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| 2SB710ATSK | PANASONIC | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
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| 2SB710A_15 | KEXIN | PNP Transistors | 获取价格 |
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| 2SB710Q | ETC | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-236 | 获取价格 |
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