2SB792-T [KEXIN]
PNP Transistors;
| 型号： | 2SB792-T |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总2页 (文件大小：962K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SB792
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High collector to emitter voltage VCEO
● Low noise voltage NV
.
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
● Complimentary to 2SD814.
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-150
-150
-5
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
-50
mA
mW
℃
I
CP
-100
200
150
P
C
T
J
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA， I =0
Ic= -1 mA， I =0
= -100μA， I =0
CB= -100 V , I =0
Min
-150
-150
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
-1
-1
uA
V
I
EB= -4V , I
=-30mA, I
C=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
C
B
B
=-3mA
-1
V
I
C
=-30mA, I
CE= -5V, I
CE = –10V, I
=-3mA
-1.2
450
hFE
V
C
= -10mA
= –1mA, G
= 100kΩ , Function = FLAT
130
V
C
V =80dB,
Noise voltage
NV
150
mV
Rg
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= -10V, I
CE= -10V, I
E
= 0,f=1MHz
= 10mA,f=200MHz
4
pF
f
E
200
MHz
■ Classification of hfe
Type
Range
Marking
2SB792-R
130-220
IR
2SB792-S
185-330
IS
2SB792-T
260-450
IT
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SB792
■ Typical Characterisitics
PC — Ta
IC — VCE
IC — VBE
240
–100
–120
–100
–80
–60
–40
–20
0
VCE=–5V
Ta=25˚C
–90
25˚C
Ta=75˚C
IB=–10mA
–9mA
200
160
120
80
–80
–70
–60
–50
–40
–30
–20
–10
0
–8mA
–7mA
–6mA
–25˚C
–5mA
–4mA
–3mA
–2mA
–1mA
40
0
0
20 40 60 80 100 120 140 160
0
–2
–4
–6
–8
–10 –12
0
– 0.4 – 0.8
–1.2
–1.6
–2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
–100
600
250
225
200
175
150
125
100
75
VCB=–10V
Ta=25˚C
IC/IB=10
VCE=–5V
–30
–10
500
400
300
200
100
0
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
– 0.3
– 0.1
–25˚C
–25˚C
50
– 0.03
– 0.01
25
0
0.1
– 0.1 – 0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
10
9
8
7
6
5
4
3
2
1
0
IE=0
f=1MHz
Ta=25˚C
–1
–3
–10
–30
–100
(
V
)
Collector to base voltage VCB
2
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