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2SB930_15

更新时间：2024-09-18 22:09:41
品牌：KEXIN
描述：PNP Transistors

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中文翻译

PCB计价

2SB930_15 概述

PNP Transistors

2SB930_15 数据手册

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SMD Type  
Transistors  
PNP Transistors  
2SB930  
TO-252  
Unit: mm  
■ Features  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
● High forward current transfer ratio hFE  
which has satisfactory linearity  
● Low collector to emitter saturation voltage VCE(sat)  
● Complementary to 2SD1253  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
■ Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-60  
-60  
-5  
V
Collector Current - Continuous  
Collector current - Pulse  
I
C
-4  
A
I
CP  
-8  
Collector Power Dissipation  
Tc = 25°C  
Ta = 25°C  
40  
P
C
W
℃
1.3  
150  
Junction Temperature  
TJ  
Storage Temperature range  
T
stg  
-55 to 150  
■ Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Collector cutoff current  
VCBO  
VCEO  
VEBO  
-60  
-60  
-5  
Ic= -100 μA， I  
Ic= -30 mA， I  
= -100μA， I  
CB= -60V , I =0  
CE= -60V ,VBE=0  
CE= -30V ,I =0  
EB= -5V , I =0  
E
=0  
=0  
=0  
B
I
E
C
I
CBO  
CES  
V
V
V
V
E
-0.1  
-400  
-700  
-0.1  
-1.5  
-1.2  
- 2  
mA  
uA  
I
Collector cutoff current  
I
CEO  
EBO  
B
Emitter cut-off current  
I
C
mA  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-4 A, I  
B
=-400mA  
=-400mA  
V
V
C
=-4 A, I  
B
V
BE  
V
V
V
CE= -4 V, I  
CE= -4 V, I  
CE= -4 V, I  
C= -3 A  
C= -1 A  
C= -3 A  
h
FE(1)  
FE(2)  
70  
15  
250  
DC current gain  
h
Turn-on time  
Storage time  
Fall time  
t
on  
0.2  
0.5  
0.2  
20  
I
C
= –4A, IB1 = – 0.4A, IB2 = 0.4A  
us  
t
stg  
t
f
Transition frequency  
f
T
V
CE= -10V, I  
C= -100mA,f=1MHz  
MHz  
■ Classification of hfe(1)  
Type  
2SB930-Q  
70-150  
2SB930-P  
120-250  
Range  
1
www.kexin.com.cn  
SMD Type  
Transistors  
PNP Transistors  
2SB930  
■ Typical Characterisitics  
PC — Ta  
IC — VCE  
IC — VBE  
50  
–6  
–10  
–8  
–6  
–4  
–2  
0
TC=25˚C  
VCE=–4V  
(1) TC=Ta  
(2) With a 50 × 50 × 2mm  
Al heat sink  
(3) Without heat sink  
(PC=1.3W)  
IB=–120mA  
45  
40  
35  
30  
25  
20  
15  
10  
5
–100mA  
–80mA  
–5  
–4  
–3  
–2  
–1  
0
(1)  
–60mA  
25˚C  
TC=100˚C  
–25˚C  
–40mA  
–20mA  
–10mA  
–8mA  
–5mA  
(2)  
(3)  
0
0
20 40 60 80 100 120 140 160  
0
–2  
–4  
–6  
–8  
–10 –12  
0
– 0.4 – 0.8  
–1.2  
–1.6  
–2.0  
(
)
( )  
V
(
V
)
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
Base to emitter voltage VBE  
VCE(sat) — IC  
hFE — IC  
fT — IC  
–100  
10000  
10000  
IC/IB=10  
VCE=–4V  
VCE=–5V  
f=1MHz  
–30  
–10  
3000  
3000  
1000  
TC=25˚C  
1000  
25˚C  
–3  
–1  
300  
100  
300  
100  
TC=100˚C  
–25˚C  
25˚C  
– 0.3  
– 0.1  
30  
10  
30  
10  
TC=100˚C  
–25˚C  
– 0.03  
– 0.01  
3
1
3
1
– 0.01 – 0.03 – 0.1 – 0.3  
–1  
–3  
–10  
– 0.01 – 0.03 – 0.1 – 0.3  
–1  
–3  
–10  
– 0.01 – 0.03 – 0.1 – 0.3  
–1  
–3  
–10  
(
A
)
( )  
A
( )  
Collector current IC A  
Collector current IC  
Collector current IC  
Area of safe operation (ASO)  
Rth(t) — t  
–100  
103  
102  
10  
(1) Without heat sink  
(2) With a 50 × 50 × 2mm Al heat sink  
Non repetitive pulse  
T
C=25˚C  
–30  
–10  
(1)  
(2)  
ICP  
IC  
t=1ms  
–3  
–1  
10ms  
1
300ms  
– 0.3  
– 0.1  
10–1  
10–2  
– 0.03  
– 0.01  
–1  
–3  
–10 –30 –100 –300 –1000  
10–4  
10–3  
10–2  
10–1  
1
10  
102  
103  
104  
(
V
)
( )  
t s  
Collector to emitter voltage VCE  
Time  
2
www.kexin.com.cn  

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