2SC2712-O [KEXIN]
NPN Transistors;
| 型号： | 2SC2712-O |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors 放大器 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：1081K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SC2712
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)
High hFE: hFE = 70 700
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
Low noise: NF = 1dB (typ.), 10dB (max)
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
60
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
50
5
150
V
mA
mA
mW
Base current
IB
30
Collector power dissipation
Junction temperature
Storage temperature range
PC
150
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I
E= 0
CEO
EBO
B
I
E
C= 0
I
CBO
EBO
V
V
CB= 60 V , I
EB= 5V , I
E
= 0
100
100
0.25
1.2
nA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=100 mA, I
B
=10mA
=10mA
V
C
=100 mA, I
B
hFE
V
CE= 6V, I
C= 2mA
70
80
700
V
CE = 6 V, I
C = 0.1 mA ,
Noise figure
NF
1
2
10
dB
f = 1KHz,RG=10KΩ
Collector output capacitance
Transition frequency
Cob
V
V
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
3.5
pF
f
T
C
= 1mA
MHz
hFE Classification
Type
Range
Marking
2SC2712-O
70-140
LO
2SC2712-Y
120-240
LY
2SC2712-G
200-400
LG
2SC2712-L
350-700
LL
1
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SMD Type
Transistors
2SC2712
Typlcal Characteristics
Static Characteristic
hFE ——
IC
10
400
COMMON EMITTER
VCE=6V
COMMON EMITTER
Ta=25℃
8
50uA
300
200
100
0
45uA
Ta=100℃
40uA
35uA
30uA
6
Ta=25℃
4
2
0
25uA
20uA
15uA
10uA
IB=5uA
8
0
2
4
6
10
1
10
100 150
0.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
IC
VBEsat ——
VCEsat —— IC
0.3
0.2
0.1
0.0
1.2
0.8
0.4
β=10
Ta=25℃
Ta=100℃
Ta=100℃
Ta=25℃
β=10
0.0
1
10
100
1
1
0
10
COLLECTOR CURRENT IC (mA)
100 150
150
COLLECTOR CURRENT IC (mA)
fT ——
IC
IC —— VBE
150
1000
100
10
1
COMMON EMITTER
VCE=6V
Ta=100℃
Ta=25℃
100
COMMON EMITTER
VCE=10V
Ta=25 oC
10
0.1
0.2
0.4
0.6
0.8
1.0
3
10
30
70
COLLECTOR CURRENT IC (mA)
BASE-EMMITER VOLTAGE VBE (V)
Cob/ Cib ——
VCB/ VEB
Pc —— Ta
100
200
150
100
50
f=1MHz
IE=0/ IC=0
Ta=25℃
Cib
10
Cob
1
0.1
0
1
10
20
25
50
75
100
125
150
0.2
REVERSE VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta (℃)
2
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