概述
数据手册2SC2982-HF_15 概述
NPN Transistors
2SC2982-HF_15 数据手册
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PDF下载SMD Type
Transistors
NPN Transistors
2SC2982-HF
■ Features
1.70 0.1
● Low saturation voltage
● Small flat package
● P
C = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SA1314-HF
0.42 0.1
0.46 0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
30
V
Collector - Emitter Voltage
Emitter - Base Voltage
10
6
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
2
4
A
mW
℃
(Note.1)
Icp
P
C
500
T
J
150
Storage Temperature Range
Tstg
-55 to 150
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 1 mA， I = 0
Ic= 10 mA，I = 0
= 1mA， I = 0
CB= 30 V , I = 0
EB= 6V , I =0
Min
30
10
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector- Base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.5
1.2
1.5
600
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=2A, I
B
B
=50mA
=50mA
0.2
V
C=2A, I
V
BE
V
V
V
V
V
CE= 1V, I
CE= 1V, I
CE= 1V, I
C
C
C
= 2A
0.86
= 0.5A
= 2A
140
70
DC current gain
hFE
140
27
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
E
=0,f=1MHz
pF
f
CE= 1V, I = 0.5A
C
150
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SC2982-A-HF 2SC2982-B-HF 2SC2982-C-HF 2SC2982-D-HF
140-240 200-330 300-450 420-600
SA* SB* SC* SD*
F
F
F
F
1
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SMD Type
Transistors
NPN Transistors
2SC2982-HF
■ Typical Characterisitics
I
– V
h
FE
– I
C
C
CE
4.0
3.0
2.0
1.0
0
1000
60
25
Common emitter
500
300
=
Ta 100°C
Ta = 25°C
15
25
−25
10
100
I
B
= 5 mA
50
30
Common emitter
V
CE
= 1 V
0
10
0.01
0
1.0
2.0
3.0
4.0
0.03
0.1
0.3
1
3
10
Collector-emitter voltage
V
(V)
Collector current
I
C
(A)
CE
V
– I
C
I – V
C BE
CE (sat)
1
4.0
3.2
Common emitter
= 1 V
Common emitter
/I = 40
I
C B
V
CE
0.5
0.3
2.4
1.6
25
−25
0.1
Ta = 100°C
0.05
0.03
Ta = 100°C
25
−25
0.8
0
0.01
0.01
0.03
0.1
0.3
1
3
10
0
0.4
0.8
1.2
1.6
(V)
2.0
Collector current
I
C
(A)
Base-emitter voltage
V
BE
Safe Operating Area
10
P
– Ta
C
I
max (pulse)*
5
3
1.4
1.2
1.0
C
(1) Mounted on a ceramic substrate
10 ms*
100 ms*
I
max (continuous)
2
C
(250 mm × 0.8 t)
(2) No heat sink
(1)
(2)
1
DC operation
Ta = 25°C
0.5
0.3
0.8
0.6
0.1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.4
0.2
0
Tested without a substrate.
V
CEO
max
0.01
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
120
140
160
Collector-emitter voltage
V
(V)
Ambient temperature Ta (°C)
CE
2
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2SC2982-HF_15 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SC2982A | ETC | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | 获取价格 |
|
| 2SC2982ATE12L | TOSHIBA | TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
|
| 2SC2982B | ETC | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | 获取价格 |
|
| 2SC2982BTE12R | TOSHIBA | TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
|
| 2SC2982C | ETC | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | 获取价格 |
|
| 2SC2982CTE12L | TOSHIBA | TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
|
| 2SC2982CTE12R | TOSHIBA | TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
|
| 2SC2982D | ETC | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | SOT-89 | 获取价格 |
|
| 2SC2982DTE12R | TOSHIBA | TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
|
| 2SC2982TE12R | TOSHIBA | TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
|
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