2SC3360 [KEXIN]
NPN Silicon Epitaxial Transistor; NPN硅外延型晶体管
| 型号： | 2SC3360 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Silicon Epitaxial Transistor |
| 文件： | 总1页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SC3360
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
High DC current gain.hFE=90 to 450
High voltage VCEO=200V
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
200
Unit
V
V
200
5
V
100
mA
mW
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
IEBO
Testconditons
VCB = 200V, IE=0
Min
Typ
Max
100
100
450
Unit
nA
VEB = 5V, IC=0
nA
VCE =10V , IC = 10mA
VCE =10V , IC = 50mA
VCE =10V , IC = 10mA
90
50
200
200
0.64
0.1
DC current gain *
hFE
Base-emitter voltage *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
VBE
0.6
0.7
0.3
1.2
V
V
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
0.8
V
fT
Cob
ton
tstg
tf
VCE = 10V , IE = -10mA
160
2.8
MHz
pF
ìs
ìs
ìs
VCB = 30V , IE = 0 , f = 1.0MHz
IC = 10mA, IB1 = -IB2 = 1mA,
VCC = 10 V
0.15
1.3
Storage time
Fall time
VBE(off) = -2.5V
0.3
* Pulse test: tp
350 ìs; d
0.02.
hFE Classification
Marking
hFE
N15
90 180
N16
135 270
N17
200 450
1
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