2SC4134 [KEXIN]
High-Voltage Switching Applications; 高压开关的应用
| 型号： | 2SC4134 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | High-Voltage Switching Applications |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
High-Voltage Switching Applications
2SC4134
TO-252
Unit: mm
6.50+0.15
2.30+0.1
Features
-0.15
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
High breakdown voltage and large current capacity.
Fast switching speed.
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-120
-100
V
-6
V
-1
A
Collector current (pulse)
Collector dissipation
ICP
-2
0.8
A
PC
W
W
PC
10
Collector dissipation
Jumction temperature
Storage temperature
Tc=25
Tj
150
Tstg
-55 to +150
1
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SMD Type
Transistors
2SC4134
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
100
Typ
Max
100
100
400
Unit
nA
Collector cutoff current
ICBO
IEBO
hFE
fT
VCB = 100V, IE=0
Emitter cutoff current
VEB = 4V, IC=0
nA
DC current gain
VCE =5V , IC = 100mA
VCE = 10V , IC = 100mA
VCB = 10V , f = 1.0MHz
Gain bandwidth product
120
8.5
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 400mA , IB = 40mA
VBE(sat) IC = 400mA , IB = 40mA
V(BR)CBO IC = 10ìA , IE = 0
0.1
0.4
1.2
0.85
V
120
100
6
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
Turn-on time
Storage time
Fall time
ton
80
850
50
ns
ns
ns
tstg
tf
hFE Classification
Rank
hFE
R
S
T
100 200
140 280
200 400
2
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