2SC4168-3 [KEXIN]
NPN Transistors;
| 型号： | 2SC4168-3 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：1120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SC4168
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Fast switching speed.
● High gain-bandwidth product.
● Low saturation voltage.
● Complementary to 2SA1607.
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
40
Unit
V
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
VCBO
VCEO
VEBO
20
5
Collector Current - Continuous
Peak Collector Current
I
C
150
300
200
150
mA
mW
℃
I
CP
Collector Power Dissipation
Junction Temperature
PC
T
J
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA， I = 0
Ic= 1 mA， RBE= ∞
= 100μA， I = 0
CB= 30 V , I = 0
EB= 4V , I =0
= 10 mA, I = 1mA
= 10 mA, I = 1mA
CE= 1V, I = 10mA
Min
40
20
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
V
V
CBO
E
CEO
EBO
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.2
1
uA
V
I
C
V
CE(sat)
BE(sat)
I
I
C
B
0.08
0.72
V
C
B
h
FE
V
C
60
270
20
Delay time
td
11
10
Rise time
t
r
20
See specified Test Circuit
ns
Storage time
t
s
70
180
25
Fall time
t
f
15
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, f=1MHz
2.6
700
pF
f
CE= 10V, I
C= 10mA
MHz
■ Classification of hfe
Type
Range
Marking
2SC4168-GT3 2SC4168-GT4 2SC4168-GT5
60-120
GT3
90-180
GT4
135-270
GT5
1
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SMD Type
Transistors
NPN Transistors
2SC4168
Switching Time Test Circuit
PW=10 s
D.C. 2.5%
Tr. Tf=1ns
I
B1
I
B2
1k
OUTPUT
2k
INPUT
50
R
+
V
B
R
5k
+
100 F
470 F
V
=--5V
V
=10V
CC
BE
5I = --5I = I =50mA
B1 B2
C
For PNP, the polarity is reversed.
■ Typical Characterisitics
I
-- V
CE
I
-- V
C
C
BE
100
160
140
120
100
80
2SC4168
2SC4168
=1V
V
CE
80
60
0.4mA
0.2mA
40
60
40
20
0
20
0
I =0
B
0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-to-Emitter Voltage, V
CE
– V
Base-to-Emitter Voltage, V
– V
BE
I
-- V
h
FE
-- I
C
C
CE
20
16
12
8
7
5
2SC4168
2SC4168
V
CE
=1V
3
2
100
7
5
3
2
4
0
I =0
B
10
0.1
0
4
8
12
16
20
2
3
5
7
2
3
5
7
2
3
5
7
100
2
3
1.0
10
Collector-to-Emitter Voltage, V
CE
– V
Collector Current, I –mA
C
2
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SMD Type
Transistors
NPN Transistors
2SC4168
■ Typical Characterisitics
Cob -- V
CB
V
(sat), V (sat) -- I
BE
CE
C
2
3
2
2SC4168
f=1MHz
2SC4168
I
/ I =10
C
B
10
1.0
7
7
5
5
3
2
3
2
0.1
7
5
1.0
7
5
3
2
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
2
3
1.0
10
1.0
10
Collector-to-Base Voltage, V
CB
-- V
Collector Current, I –mA
SW Time --C I
C
P
-- Ta
C
1000
240
200
160
120
80
2SC4168
=10V
2SC4168
7
5
V
CC
I =5I =--5I
C
B1 B2
3
2
100
7
5
3
2
40
0
10
7
5
1.0
2
3
5
7
2
3
5
7
100
2
3
0
20
40
60
80
100
120
140
160
10
Collector Current, I –mA
Ambient Temperature, Ta --
C
C
f
-- I
T
C
2
2SC4168
V
CE
=10V
1000
7
5
3
2
100
7
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
Collector Current, I –mA
C
3
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