2SD1328 [KEXIN]
Silicon NPN Epitaxial Planar Type; NPN硅外延平面型
| 型号： | 2SD1328 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Epitaxial Planar Type |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD1328
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Low ON resistance Ron.
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
Low collector-emitter saturation voltage VCE(sat).
High foward current transfer ratio hFE.
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
25
20
V
12
V
Collector current
1
0.5
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
A
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
100
Unit
nA
V
Collector cutoff current
VCB = 25 V, IE = 0
IC = 10 ìA, IE = 0
IC = 1 mA, IB = 0
IE = 10 ìA, IC = 0
VCE = 2 V, IC = 0.5 A
Collector-base voltage
VCBO
VCEO
VEBO
hFE
25
20
Collector-emitter voltage
Emitter-base voltage
V
12
V
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
200
800
0.4
1.2
VCE(sat) IC = 0.5 A, IB = 20 mA
VBE(sat) IC = 0.5 A, IB = 50 mA
0.13
V
V
fT
VCB = 10 V, IE = -50 mA , f = 200 MHz
VCB = 10V , IE = 0 , f = 1.0MHz
200
10
MHz
pF
Collector output capacitance
Cob
ON resistanse
Ron
1.0
Ù
hFE Classification
1D
S
Marking
Rank
hFE
R
T
200 350
300 500
400 800
1
www.kexin.com.cn
相关型号：
2SD1328TMG
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
PANASONIC
2SD1328TSK
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
PANASONIC
©2020 ICPDF网 联系我们和版权申明