2SD1767 [KEXIN]
Medium Power Transistor; 中功率晶体管
| 型号： | 2SD1767 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Medium Power Transistor |
| 文件： | 总1页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Medium Power Transistor
2SD1767
Features
High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
Rating
Unit
V
80
VCEO
80
V
VEBO
5
V
IC
0.7
A
Collector current
IC (Pulse) *1
1
A
PC
0.5
2
W
W
Collector power dissipation
2
PC
Tj
*
Junction temperature
Storage temperature
150
Tstg
-55 to +150
*1. Pw=10ms.
*2. 40X40X0.7mm Ceramic board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
80
80
5
Typ
Max
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
BVCBO IC=50ìA
BVCEO IC=2mA
BVEBO IE=50ìA
V
V
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB=50V
VEB=4V
0.5
0.5
0.4
390
ìA
ìA
V
Collector-emitter saturation voltage
Forward current transfer ratio
Transition frequency
VCE(sat) IC=500mA,IB=50mA
0.2
hFE
fT
VCE=3V,IC=0.1A
82
VCE=10V, IE= -50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
120
10
MHz
pF
Output capacitance
Cob
hFE Classification
DC
Marking
Rank
hFE
P
Q
R
82 180
120 270
180 390
1
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