2SD2457-Q [KEXIN]
NPN Transistors;
| 型号： | 2SD2457-Q |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：890K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD2457
1.70 0.1
■ Features
● High collector to emitter voltage VCEO
.
● Large collector power dissipation P
● Complementary to 2SB1599
C.
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
50
Unit
V
VCBO
VCEO
VEBO
40
5
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
1.5
3
A
I
CP
P
C
1
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
50
40
5
Ic= 1 mA， I
Ic= 2 mA， I
E
= 0
= 0
B
I
E
= 1 mA， I
CB= 50 V , I
CE= 40 V , I
EB= 5V , I
=1.5 A, I
=2 A, I =200mA
CE= 5V, I = 1 A
CB=20V, I =0, f=1MHz
CE=5V,I =-500mA,f=200MHz
C= 0
ICBO
ICEO
I
EBO
V
V
V
E= 0
1
10
0.1
1
uA
V
B= 0
C=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
B=150mA
V
C
B
1.5
220
hFE
V
V
V
C
80
Collector output capacitance
Transition frequency
C
ob
T
E
45
pF
f
E
150
MHz
■ Classification of hfe
Type
Range
Marking
2SD2457-Q
80-160
2SD2457-R
120-220
1YR
1YQ
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD2457
■ Typical Characterisitics
PC — Ta
IC — VCE
VCE(sat) — IC
1.2
4.0
10
IC/IB=10
Ta=25˚C
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
3.5
3
1
IB=40mA
1.0
for the collector portion.
35mA
30mA
3.0
2.5
2.0
1.5
1.0
0.5
0
0.8
Ta=75˚C
25˚C
0.3
0.1
25mA
20mA
–25˚C
0.6
0.4
0.2
0
15mA
10mA
0.03
0.01
5mA
0.003
0.001
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0.01 0.03
0.1
0.3
1
3
10
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VBE(sat) — IC
hFE — IC
fT — IE
100
300
240
200
160
120
80
IC/IB=10
VCE=5V
VCB=5V
Ta=25˚C
30
10
250
200
150
100
50
3
1
Ta=75˚C
25˚C
25˚C
75˚C
Ta=–25˚C
–25˚C
0.3
0.1
40
0.03
0.01
0
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
( )
A
( )
A
( )
Emitter current IE A
Collector current IC
Collector current IC
Cob — VCB
120
100
80
60
40
20
0
IE=0
f=1MHz
Ta=25˚C
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
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