2SD874-HF_15 [KEXIN]
NPN Transistors;
| 型号： | 2SD874-HF_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总1页 (文件大小：421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD874-HF
1.70 0.1
■ Features
● Low Collector-Emitter Saturation Voltage
● Large Collector Power Dissipation
● Mini Power Type Package
● Complimentary to 2SB766-HF
0.42 0.1
0.46 0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
30
Collector - Emitter Voltage
25
Emitter - Base Voltage
5
1
Collector Current - Continuous
Thermal Resistance From Junction To Ambient
Collector Power Dissipation
Junction Temperature
I
C
A
RθJA
250
℃/W
mW
P
C
500
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
30
25
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I
E= 0
B
I
E
C= 0
I
CBO
EBO
V
V
CB= 20 V , I
EB= 4V , I
E
= 0
100
100
0.4
nA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=500 mA, I
B
=50mA
=50mA
V
C
=500 mA, I
B
1.2
h
FE(1)
V
V
V
V
CE= 10V, I
CE= 5V, I = 1A
= 0,f=1MHz
= 50mA,f=200MHz
C
= 500mA
85
50
340
DC current gain
hFE(2)
C
Collector output capacitance
Transition frequency
C
ob
CB= 10V, I
CE= 10V, I
E
20
pF
f
T
C
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD874-Q-HF
85-170
2SD874-R-HF
120-240
2SD874-S-HF
170-340
ZQ
F
ZR
F
ZS
F
1
www.kexin.com.cn
相关型号：
2SD874-Q-TP
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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