2SD882 [KEXIN]

NPN Silicon Power Transistor; NPN硅功率晶体管


型号：	2SD882
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	NPN Silicon Power Transistor NPN硅功率晶体管晶体晶体管
文件：	总1页 (文件大小：51K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Transistors

NPN Silicon Power Transistor

2SD882

Features

Excellent hFE linearity and high hFE

hFE = 60 to 400 (VCE = 2 V, IC = 1 A)

Absolute Maximum Ratings Ta = 25

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current to Continuous

Collector Dissipation

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

P^c

0.5

Junction Temperature

T^J

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Ic=100uA ,IE=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

I^CEO

I^EBO

IC= 10 mA , IB=0

IE= 100 uA ,IC=0

VCB=40 V , IE=0

VCE=30 V , IB=0

VEB=6V , IC=0

Collector cut-off current

Emitter cut-off current

V^CE= 2V, IC= 1A

V^CE=2V, IC= 100mA

IC=2A, IB= 0.2A

400

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f ^T

0.5

1.5

VCE=5 V, IC=0.1mA,f = 10MHz

MHz

hFE Classification

Rank

hFE

60 120

100 200

160 320

200 400

www.kexin.com.cn

相关型号：

2SD882-126_15

NPN Transistors

KEXIN

2SD882-BP

Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

MCC