2SK2887 [KEXIN]
N-Channel Silicon MOSFET; N沟道MOSFET硅
| 型号： | 2SK2887 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | N-Channel Silicon MOSFET |
| 文件： | 总1页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
N-Channel Silicon MOSFET
2SK2887
Features
TO-252
Unit: mm
Low on-resistance.
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Fast switching speed.
Wide SOA (safe operating area).
Gate-source voltage (VGSS) guaranteed to be 30V.
Easily designed drive circuits.
Easy to parallel.
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
200
Gate to source voltage
V
30
3
12
A
Drain current
Idp *
PD
A
Power dissipation
20
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
VDSS
Testconditons
ID=1mA,VGS=0
Min
200
Typ
Max
Unit
V
IDSS
IGSS
VGS(th)
Yfs
VDS=200V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=1.5A
VGS=10V,ID=1.5A
100
100
4.0
A
nA
V
2.0
0.6
1.5
0.7
230
100
35
S
RDS(on)
Ciss
Coss
Crss
ton
0.9
pF
pF
pF
ns
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
10
Rise time
tr
12
ID=1.5A,VGS(on)=10V,RL=68 ,RG=10
,VDD=100V
Turn-off delay time
toff
26
Fall time
tf
34
Reverse recovery time
trr
96
IDR=3A,VGS=0V,di/dt=100A/
s
Qrr
Reverse recovery charge
0.56
c
1
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