2SK3560 [KEXIN]
Silicon N-channel power MOSFET; 硅N沟道功率MOSFET
| 型号： | 2SK3560 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon N-channel power MOSFET |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon N-channel power MOSFET
2SK3560
TO-263
Unit: mm
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Features
Low on-resistance, low Qg
High avalanche resistance
For high-speed switching
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
230
30
Unit
V
V
30
A
Peak drain current
IDP
120
3
A
Power dissipation Ta = 25
Power dissipation
PD
W
50
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
1
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SMD Type
Transistors
2SK3560
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID = 1 mA, VGS = 0
Min
230
Typ
Max
Unit
V
Gate-drain surrender voltage
Diode forward voltage
VDSS
VDSF
Vth
IDR = 30 A, VGS = 0
-1.5
4
V
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Turn-on delay time
VDS = 25 V, ID = 1 mA
VDS = 184 V, VGS = 0
VGS = 30 V, VDS = 0
2
V
IDSS
IGSS
100
1
ìA
ìA
mÙ
S
RDS(on) VGS = 10 V, ID = 15 A
55
19
74
VDS = 25 V, ID = 15 A
8
Yfs
Ciss
Coss
Crss
td(on)
tr
2 330
356
44
pF
pF
pF
ns
ns
ns
ns
ns
nC
nC
nC
nC
/W
/W
VDS = 25 V, VGS = 0, f = 1 MHz
39
VDD
RL
100 V, ID = 15 A
Rise time
37
6.7 Ù, VGS = 10 V
Turn-off delay time
td(off)
tf
221
46
Fall time
Reverse recovery time
Reverse recovery charge
Total gate charge
trr
L = 230 ìH, VDD = 100 V
IDR = 15 A, di /dt = 100 A/ ìs
VDD = 100 V, ID = 25 A
VGS = 10 V
164
853
51.2
8.2
Qrr
Qg
Gate-source charge
Qgs
Qgd
Rth(ch-c)
Rth(ch-a)
Gate-drain charge
19.4
Channel-case heat resistance
Channel-atmosphere heat resistance
2.5
89.2
2
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