A4T [KEXIN]
High-Speed Double Diode Array; 高速双二极管阵列
| 型号： | A4T |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | High-Speed Double Diode Array |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Diodes
High-Speed Double Diode Array
BAV70S
SOT-363
Unit: mm
+0.1
1.3
-0.1
0.65
Features
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:max. 75 V
Repetitive peak reverse voltage:max. 85 V
Repetitive peak forward current:max. 450 mA.
+0.05
0.1
-0.02
+0.1
0.3
-0.1
+0.1
2.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Per diode
Symbol
Conditions
Min
Max
Unit
repetitive peak forward current
continuous reverse voltage
VRRM
VR
85
75
V
V
single diode loaded;
all diodes loaded;
250
100
450
mA
mA
mA
continuous forward current
IF
repetitive peak forward current
IFRM
square wave; Tj = 25 prior to surge;
4
t = 1
s
non-repetitive peak forward current
IFSM
A
t = 1 ms
t = 1 s
1
0.5
total power dissipation
Ptot
Tstg
Tj
350
+150
+150
255
mW
Ts = 60 ; note 1
storage temperature
-65
-65
junction temperature
thermal resistance from junction to ambient
Rth j-a
K/W
Note
1. One or more diodes loaded.
1
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SMD Type
Diodes
BAV70S
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Max
200
260
340
420
30
Unit
mV
IF = 1 mA
IF = 10 mA
forward voltage
VF
IF = 50 mA
IF = 150 mA
VR = 25 V
nA
A
VR = 75 V
2.5
60
reverse current
IR
VR = 25 V; Tj = 150
VR = 75 V; Tj = 150
VR = 0; f = 1 MHz;
when switched from IF = 10 mA to IR = 10 mA;
A
100
1.5
A
diode capacitance
Cd
trr
pF
reverse recovery time
forward recovery voltage
4
ns
V
RL = 100 ; measured at IR = 1 mA;
Vfr
when switched from IF = 10 mA; tr = 20 ns
1.75
Marking
Marking
A4t
2
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