BC858B [KEXIN]
PNP Transistor; PNP晶体管
| 型号： | BC858B |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistor |
| 文件： | 总3页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistor
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
KC856
Symbol
VCBO
Rating
-80
Unit
Collector-Base Voltage
Collector-Emitter Voltage
V
V
KC857
KC858
KC856
KC857
KC858
-50
-30
-65
VCEO
-45
-30
Emitter-Base Voltage
VEBO
IC
-5
V
A
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.1
PC
200
mW
TJ
150
Storage Temperature
Tstg
-65 to +150
1
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SMD Type
Transistors
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-80
-50
-30
-65
-45
-30
-5
Typ
Max
Unit
V
KC856
Collector-base breakdown voltage
VCBO Ic= -10ìA, IE=0
VCEO Ic= -10 mA, IB=0
KC857
KC858
KC856
KC857
KC858
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
A
VEBO IE= -10ìA, IC=0
VCB= -70 V , IE=0
KC856
KC857
KC858
KC856
KC857
KC858
ICBO
-0.1
-0.1
VCB= -45 V , IE=0
VCB= -25 V , IE=0
VCE= -60 V , IB=0
Collector cut-off current
Emitter cut-off current
DC current gain
ICEO
A
A
VCE= -40 V , IB=0
VCE= -25 V , IB=0
IEBO VEB= -5 V , IC=0
-0.1
250
475
800
-0.5
-1.1
4.5
KC856A, 857A,858A
KC856B, 857B,858B
KC857C,KC858C
120
220
420
hFE
VCE= -5V, IC= -2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
VCE(sat) IC=-100mA, IB= -5 mA
VBE(sat) IC= -100 mA, IB= -5mA
Cob VCB=-10V,f=1MHz
V
V
pF
VCE= -5 V, IC= -
fT
Transition frequency
100
MHz
10mA,f=100MHz
Marking
NO.
KC856A
3A
KC856B
Marking
3B
NO.
KC857A
3E
KC857B
3F
KC857C
3G
Marking
NO.
KC858A
3J
KC858B
3K
KC858C
3L
Marking
2
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SMD Type
Transistors
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Typical Characteristics
Fig.2 DC Current Gain
Fig.1 Static Characteristic
Fig.3 Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Fig.4 Base Emitter ON Voltage
Fig.6 Current Gain Bandwidth Product
Fig.5 Collector Output Capacitance
3
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