BCV72 [KEXIN]
NPN General Purpose Transistors; NPN通用晶体管
| 型号： | BCV72 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN General Purpose Transistors |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN General Purpose Transistors
BCV71,BCV72
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Low current (max. 100 mA).
Low voltage (max. 60 V).
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
80
60
Collector-emitter voltage
V
Emitter-base voltage
5
V
Collector current
100
mA
mA
mA
mW
Peak collector current
ICM
200
Peak base current
IBM
200
Total power dissipation
Ptot
250
Storage temperature
Tstg
-65 to +150
150
Junction temperature
Tj
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Ramb
Rth j-a
-65 to +150
500
K/W
1
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SMD Type
Transistors
BCV71,BCV72
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
100
10
Unit
nA
IE = 0; VCB = 20 V
Collector cutoff current
Emitter cutoff current
ICBO
ìA
nA
IE = 0; VCB = 20 V; Tj = 100
IC = 0; VEB = 5 V
IEBO
100
BCV71
90
DC current gain
hFE
hFE
IC = 10 ìA; VCE = 5 V
IC = 2 mA; VCE = 5 V
BCV72
BCV71
BCV72
150
110
200
220
450
250
DC current gain
IC = 10 mA; IB = 0.5 mA
120
210
750
850
mV
mV
mV
mV
mV
pF
Collector-emitter saturation voltage
Base to emitter saturation voltage
VCE(sat)
VBE(sat)
IC = 50 mA; IB = 2.5 mA
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
Base to emitter voltage
Collector capacitance
Transition frequency
VBE
CC
fT
IC = 2 mA; VCE = 5 V
550
100
700
10
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
2.5
MHz
IC = 200 ìA; VCE = 5 V; RS = 2 kÙ;f = 1
kHz; B = 200 Hz
Noise figure
NF
dB
hFE Classification
TYPE
BCV71
K7
BCV72
K8
Marking
2
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