BCX69-10 [KEXIN]
PNP Silicon AF Transistors; PNP硅晶体管自动对焦
| 型号： | BCX69-10 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Silicon AF Transistors |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Silicon AF Transistors
BCX69
SOT-89
Unit: mm
+0.1
-0.1
+0.1
1.50
-0.1
4.50
1.80
+0.1
-0.1
Features
For general AF applications.
High collector current.
High current gain.
+0.1
0.48
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
Low collector-emitter saturation voltage.
1. Base
+0.1
-0.1
3.00
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
20
25
V
5
V
1
A
Peak collector current
Base current
ICM
2
A
IB
100
mA
mA
W
Peak base current
IBM
200
Total power dissipation
Junction temperature
Storage temperature
Junction - soldering point
Ptot
1
150
Tj
Tstg
RthJS
-65 to +150
20
K/W
1
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SMD Type
Transistors
BCX69
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC = 30 mA, IB = 0
Min
20
25
5
Typ
Max
Unit
V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC = 10 ìA, IB = 0
V
IE = 1 ìA, IC = 0
V
VCB = 25 V, IE = 0
100
100
nA
ìA
Collector cutoff current
ICBO
hFE
VCB = 25 V, IE = 0 , TA = 150
IC = 5 mA, VCE = 10 V
DC current gain *
50
85
BCX69
375
160
250
375
DC current gain *
BCX69-10
BCX69-16
BCX69-25
85
100
160
250
hFE
IC = 500 mA, VCE = 1 V
100
160
60
DC current gain *
hFE
IC = 1A, VCE = 1V
Collector-emitter saturation voltage
*
VCE(sat)
VBE(ON)
IC = 1 A, IB = 100 mA
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
0.5
1
V
Base-emitter voltage
*
0.6
Transition frequency
fT
IC = 100 mA, VCE = 5 V, f = 20 MHz
100
MHz
* Pulse test: t
300ìs, D = 2%.
hFE Classification
TYPE
BCX69
CE
BCX69-10
CF
BCX69-16
CG
BCX69-25
CH
Marking
2
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