BSR19A [KEXIN]
NPN High-Voltage Transistors; NPN型高压晶体管
| 型号： | BSR19A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN High-Voltage Transistors |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN High-Voltage Transistors
BSR19,BSR19A
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Low current (max. 300 mA)
High voltage (max. 160 V).
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
160
Unit
V
Collector-base voltage
Collector-emitter voltage
BSR19
VCBO
BSR19A
BSR19
180
V
140
V
VCEO
BSR19A
160
V
Emitter-base voltage
Collector current
VEBO
IC
ICM
IB
6
V
300
mA
mA
mA
mA
mW
Peak collector current
Base current
600
100
Peak base current
IBM
Ptot
Tstg
Tj
100
Total power dissipation *
Storage temperature
Junction temperature
Operating ambient temperature
250
-65 to +150
150
Ramb
Rth j-a
-65 to +150
500
Thermal resistance from junction to ambient *
K/W
* Transistor mounted on an FR4 printed-circuit board.
1
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SMD Type
Transistors
BSR19,BSR19A
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
100
100
50
Unit
nA
ìA
nA
ìA
nA
Collector cutoff current
Collector cutoff current
BSR19
IE = 0; VCB = 100 V
IE = 0; VCB = 100 V; Tamb = 100
IE = 0; VCB = 120 V
BSR19A
ICBO
IEBO
hFE
50
IE = 0; VCB = 120 V; Tamb = 100
IC = 0; VEB = 4 V
Emitter cutoff current
DC current gain *
50
BSR19
BSR19A
BSR19
60
80
20
30
250
250
IC = 10 mA; VCE = 5 V
DC current gain *
hFE
IC = 50 mA; VCE = 5 V
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
BSR19A
collector-emitter saturation voltage
VCEsat
VCEsat
150
250
200
6
mV
mV
mV
pF
collector-emitter saturation voltage BSR19
BSR19A
Collector capacitance
Transition frequency
Cc
fT
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
100
300
MHz
hFE Classification
TYPE
BSR19
U35
BSR19A
U36
Marking
2
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